Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder

Autor: Yi Huang, Yanjun He, Brian Skinner, B. I. Shklovskii

Publikováno v: Physical Review B. 105

In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $\Delta$. But transport experiments usually exhibit a much smaller activation energy at low temperature, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb224a9f4346a221e52477df375ebc60
https://doi.org/10.1103/physrevb.105.054206

Metal-insulator transition in n -type bulk crystals and films of strongly compensated SrTiO3

Autor: B. I. Shklovskii, Yi Huang, Y. Ayino

Publikováno v: Physical Review Materials. 5

We start by analyzing experimental data of Spinelli et al. [Phys. Rev. B 81, 155110 (2010)] for the conductivity of $n$-type bulk crystals of ${\mathrm{SrTiO}}_{3}$ (STO) with broad electron concentration $n$ range of $4\ifmmode\times\else\texttimes\

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https://doi.org/10.1103/physrevmaterials.5.044606

Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3

Autor: B. I. Shklovskii, Dennis Christensen, Yunzhong Chen, K. V. Reich, Harry L. Tuller, Felix Trier, Yuze Zhang, Nini Pryds

Publikováno v: Trier, F, Reich, K V, Christensen, D V, Zhang, Y, Tuller, H L, Chen, Y, Shklovskii, B I & Pryds, N 2017, ' Universality of electron mobility in LaAlO 3 /SrTiO 3 and bulk SrTiO 3 ', Applied Physics Letters, vol. 111, no. 9, 092106 . https://doi.org/10.1063/1.5001316
arXiv

Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a9570b932c1febe6048c1c47944073b
https://doi.org/10.1063/1.5001316

Hopping transport in δ-doping layers in GaAs

Autor: Qiu Yi Ye, B. I. Shklovskii, K. H. Ploog, F. Koch, Artur Zrenner

Publikováno v: Physical Review B. 41:8477-8484

We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple \ensuremath{\delta} layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have deter

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00c66c6ff299dbab2bbbb209f1a37732
https://doi.org/10.1103/physrevb.41.8477

Coulomb blockade in the quantum-Hall-effect state

Autor: Leonid I. Glazman, B. I. Shklovskii, Allan K. Evans

Publikováno v: Physical review. B, Condensed matter. 48(15)

It is well known that at low temperature, a small two-dimensional (2D) electron gas shows peaks in the linear conductance at a series of sharply defined values of the external gate voltage. Recently published experimental studies have shown that unde

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e128619f3e1798af30d722e562be085
https://pubmed.ncbi.nlm.nih.gov/10007419