Zobrazeno 1 - 10
of 23
pro vyhledávání: '"B. I. Seleznev"'
Publikováno v:
Semiconductors. 54:317-321
Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility of forming low-resistance contacts without the application of high-temperatu
Autor:
B I Seleznev, A V Zhelannov
Publikováno v:
Journal of Physics: Conference Series. 2052:012057
The epitaxial layers of n-n+-GaN were processed by plasma-chemical etching using a Sentech SI 500 unit equipped with an inductively coupled plasma source. The regimes of gallium nitride processing in chlorine plasma have been established, which make
Publikováno v:
Journal of Physics: Conference Series. 2052:012051
A study of the technology of selective oxidation of the buried AlGaAs layer used as an aperture layer in the structure of a Vertical-cavity surface-emitting laser has been carried out. Oxidation process was made as thermal oxidating in a humidified n
Publikováno v:
Journal of Physics: Conference Series. 1658:012012
Ion-doped layers of n+ - GaN were formed with a high degree of activation of the embedded impurity. Si+ ion implantation was performed in GaN epitaxial layers grown by MOCVD. Profiles of embedded silicon in gallium nitride were calculated. The experi
Publikováno v:
Journal of Physics: Conference Series. 1658:012069
The paper presents the results on fabrication technique of a 1,55 μm wafer-fused vertical-cavity surface-emitting lasers (VCSELs) based on the InAlGaAsP/InP optical cavity and AlGaAs/GaAs distributed Bragg reflectors (DBRs) grown by solid-source mol
Publikováno v:
Journal of Physics: Conference Series. 1658:012049
We studied the concentration profiles of charge carriers that are characteristic for ion-doped layers (IDL) used in the manufacturing of field-effect transistors with a Schottky barrier (FTS) on gallium arsenide. Silicon was used as a dopant in the f
Publikováno v:
Semiconductors. 50:832-838
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-d
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 939:012082
The technology of forming micro devices based on gallium nitride, including the main stages of manufacturing, namely, inter-assembly isolation, formation of non-straightening (ohmic) and straightening (Schottky barrier) contacts, surface passivation,
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 656:012060
The technologies of plasma-chemical etching of AlxGa1-xN epitaxial layers in chlo-rine-containing mixtures, which allow forming a microrelief on the surface of a semiconductor in the range from tens of nanometers to tens of micrometers, are presented
Publikováno v:
Journal of Physics: Conference Series. 1352:012018
In this paper, we consider the synthesis of a compact (SPICE) Schottky diode model on GaN. Synthesis of a compact (SPICE) Schottky diode model is implemented on the basis of a modified model of a conventional diode on a p-n junction by extracting the