Zobrazeno 1 - 10
of 58
pro vyhledávání: '"B. I. Seleznev"'
Publikováno v:
Semiconductors. 54:317-321
Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility of forming low-resistance contacts without the application of high-temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3dd4625fd3ef14db43f3804524fdd3
https://doi.org/10.1134/s1063782620030197
https://doi.org/10.1134/s1063782620030197
Autor:
B I Seleznev, A V Zhelannov
Publikováno v:
Journal of Physics: Conference Series. 2052:012057
The epitaxial layers of n-n+-GaN were processed by plasma-chemical etching using a Sentech SI 500 unit equipped with an inductively coupled plasma source. The regimes of gallium nitride processing in chlorine plasma have been established, which make
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95ce4b148f7f4549b836b5fc2179082
https://doi.org/10.1088/1742-6596/2052/1/012057
https://doi.org/10.1088/1742-6596/2052/1/012057
Publikováno v:
Journal of Physics: Conference Series. 2052:012051
A study of the technology of selective oxidation of the buried AlGaAs layer used as an aperture layer in the structure of a Vertical-cavity surface-emitting laser has been carried out. Oxidation process was made as thermal oxidating in a humidified n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00abb80a1840ab7707c39bb0257814a0
https://doi.org/10.1088/1742-6596/2052/1/012051
https://doi.org/10.1088/1742-6596/2052/1/012051
Publikováno v:
Semiconductors. 50:832-838
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea7ded2f566f48f0e30a39ea194bca8
https://doi.org/10.1134/s1063782616060221
https://doi.org/10.1134/s1063782616060221
Publikováno v:
Journal of Physics: Conference Series. 1658:012012
Ion-doped layers of n+ - GaN were formed with a high degree of activation of the embedded impurity. Si+ ion implantation was performed in GaN epitaxial layers grown by MOCVD. Profiles of embedded silicon in gallium nitride were calculated. The experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2bd448c7a269a670e5e345a61465b66
https://doi.org/10.1088/1742-6596/1658/1/012012
https://doi.org/10.1088/1742-6596/1658/1/012012
Publikováno v:
Journal of Physics: Conference Series. 1658:012069
The paper presents the results on fabrication technique of a 1,55 μm wafer-fused vertical-cavity surface-emitting lasers (VCSELs) based on the InAlGaAsP/InP optical cavity and AlGaAs/GaAs distributed Bragg reflectors (DBRs) grown by solid-source mol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6dc4522453e434c33dfa6bd28ef9293
https://doi.org/10.1088/1742-6596/1658/1/012069
https://doi.org/10.1088/1742-6596/1658/1/012069
Publikováno v:
Journal of Physics: Conference Series. 1658:012049
We studied the concentration profiles of charge carriers that are characteristic for ion-doped layers (IDL) used in the manufacturing of field-effect transistors with a Schottky barrier (FTS) on gallium arsenide. Silicon was used as a dopant in the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a20b2564acd7bc4bd40d26e4ae45c7d5
https://doi.org/10.1088/1742-6596/1658/1/012049
https://doi.org/10.1088/1742-6596/1658/1/012049
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 939:012082
The technology of forming micro devices based on gallium nitride, including the main stages of manufacturing, namely, inter-assembly isolation, formation of non-straightening (ohmic) and straightening (Schottky barrier) contacts, surface passivation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2bd2e597135f82d697b2306f29c5470
https://doi.org/10.1088/1757-899x/939/1/012082
https://doi.org/10.1088/1757-899x/939/1/012082
Publikováno v:
Semiconductors. 48:1499-1503
A model of sensitive layers with built-in percolation-cluster structure near the percolation threshold is developed. It is shown that, in the case of the interaction of such gas-sensitive layers with reducing gases, the value of the gas sensitivity c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6c77f719c2613084de87519b6ec0f1
https://doi.org/10.1134/s1063782614110177
https://doi.org/10.1134/s1063782614110177
Publikováno v:
Measurement Techniques. 56:1290-1295
A method for directly measuring the loss resistance for microwave pin-diodes using a vector circuit analyzer is considered. The problems involved in constructing a contact device for the pin-diodes and for calibration are analyzed. An installation ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66bb5d245ee63af95d16c615b32dc821
https://doi.org/10.1007/s11018-014-0370-y
https://doi.org/10.1007/s11018-014-0370-y