Zobrazeno 1 - 10
of 17
pro vyhledávání: '"B. Huebschman"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:3205-3211
This paper presents extensive thermal characterization of recently fabricated high-performance millimeter-wave GaN/SiC devices from four sources across temperature (-25°C to + 125°C). The changes with temperature for: output power at millimeter-wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::befacdad50774b9e3ee4d9c8fe3f7c77
https://doi.org/10.1109/tmtt.2009.2034050
https://doi.org/10.1109/tmtt.2009.2034050
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 54:4456-4463
A broadband Ka-band AlGaN/GaN on SiC high electron-mobility transistor monolithic-microwave integrated-circuit (MMIC) power amplifier was developed for millimeter-wave antenna applications. The 0.18-mum gate two-stage 50-Omega matched MMIC produces 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95838374a426130592c7b593a749319
https://doi.org/10.1109/tmtt.2006.883599
https://doi.org/10.1109/tmtt.2006.883599
Publikováno v:
IEEE Microwave and Wireless Components Letters. 21:544-546
This letter discusses the first implementation of the high voltage/high power (HiVP) architecture in silicon at millimeter-wave frequencies. Implemented in a commercial 0.12 μm SiGe HBT BiCMOS process, PSAT = 19.0 dBm with a PAE of 11.47% in an area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1b5cc14606b1243816cd6b4adb01974
https://doi.org/10.1109/lmwc.2011.2164782
https://doi.org/10.1109/lmwc.2011.2164782
Autor:
Pankaj B. Shah, B. Huebschman
The design of monolithic microwave integrated circuits (MMIC) is dependent on the ability to generate accurate device models. Prior knowledge of the external parasitic components is required to determine the small signal model of the intrinsic device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4beff10d23063b091cdc579b857af55b
https://doi.org/10.21236/ada539647
https://doi.org/10.21236/ada539647
The design of monolithic microwave integrated circuits (MMIC) is dependent on the ability to generate accurate device models. Prior knowledge of the external parasitic components is required to determine the small-signal model of the intrinsic device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0faf87ae7557a185e7f353e46f635485
https://doi.org/10.21236/ada499619
https://doi.org/10.21236/ada499619
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
A broadband Ka-band AlGaN/GaN on SiC HEMT power amplifier MMIC was developed for millimeter-wave antenna applications. The output stage is composed of a 1.2-mm-wide device with 0.18 mum gate length. The two-stage 50-ohm matched MMIC produces 13plusmn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ac723271552b2c844b1cdafe5f0ff0
https://doi.org/10.1109/mwsym.2006.249737
https://doi.org/10.1109/mwsym.2006.249737
Publikováno v:
IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..
This study presents extensive characterization and comparison of current GaN/SiC devices (from 5 US manufacturers) across temperature (-25-125/spl deg/C). The changes with temperature for: saturated current (I/sub dss/), transconductance (g/sub m/),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae4d1187ea4c6af9fe4a55264c6d38c5
https://doi.org/10.1109/csics.2005.1531790
https://doi.org/10.1109/csics.2005.1531790
Publikováno v:
Third IEEE International Vacuum Electronics Conference (IEEE Cat. No.02EX524).
Summary form only given. At the University of Maryland, we have been exploring the possibility of using gyroklystrons to drive advanced linear colliders above X-band. We have designed and tested a high-gain four-cavity frequency-doubling system to en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c9579264e68fc12c04362aefae3ecd7
https://doi.org/10.1109/ivelec.2002.999271
https://doi.org/10.1109/ivelec.2002.999271
Publikováno v:
Twenty Seventh International Conference on Infrared and Millimeter Waves.
We have tested 3 and 4-cavity frequency-doubling gyroklystrons that have produced 25 MW of power at 17.14 GHz. We have encountered two problems that have prevented enhanced performance: an input cavity instability and non-uniform emission. In this pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6268fddbc3fa78af06c60da8cca6cd93
https://doi.org/10.1109/icimw.2002.1076155
https://doi.org/10.1109/icimw.2002.1076155
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