Zobrazeno 1 - 10
of 827
pro vyhledávání: '"B. Hook"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 266-272 (2016)
Vertically stacked nanowire field effect transistors currently dominate the race to become mainstream devices for 7-nm CMOS technology node. However, these devices are likely to suffer from the issue of nanowire stack position dependent drain current
Externí odkaz:
https://doaj.org/article/d8e947e71a8f48ddb603296ce72da2ee
Autor:
Ernest B. Hook
Publikováno v:
Academic Questions. 34:110-118
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf9be0e38ee5a548e3fe44cf12f32764
https://doi.org/10.51845/34.4.23
https://doi.org/10.51845/34.4.23
Autor:
Ernest B. Hook
For centuries, observers have noted the many obstacles to intellectual change in science. In a much-discussed paper published in Scientific American in 1972, molecular biologist Gunther Stent proposed an explicit criterion for one kind of obstacle to
Autor:
Ernest B, Hook
Publikováno v:
The New England journal of medicine. 386(13)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::28ab8aebf9849d6ea3d8d105a93bd23c
https://pubmed.ncbi.nlm.nih.gov/35353975
https://pubmed.ncbi.nlm.nih.gov/35353975
Publikováno v:
IEEE Transactions on Electron Devices. 67:2208-2212
Application of high-frequency ac stress in the place of conventional dc stress is known to decrease the damage caused by self-heating (SH)-induced hot-carrier injection (HCI) in highly scaled MOSFET devices. However, the effect of hot-carrier degrada
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f02eb5fefc098bbc53bf8a52edfd0f60
https://doi.org/10.1109/ted.2020.2977734
https://doi.org/10.1109/ted.2020.2977734
Publikováno v:
IEEE Transactions on Electron Devices. 66:2075-2080
A comprehensive study on hot-carrier degradation (HCD) mechanisms in 14 nm silicon-on-insulator (SOI) n-channel FinFETs is presented. The impact of high-frequency AC stress bias on self-heating (SH) enhanced hot-carrier injection in oxide bulk traps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a804eedf5167dddc924a8752840940d2
https://doi.org/10.1109/ted.2019.2905053
https://doi.org/10.1109/ted.2019.2905053
Autor:
Ji Kai Wang, Prasad S. Gudem, Michael Wong, Zhi Cheng Yuan, Terence B. Hook, Paul M. Solomon, Mani Vaidyanathan, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 66:2028-2035
Ferroelectric and negative-capacitance field-effect transistors (FeFETs and NCFETs) have recently garnered great attention as devices for applications in memory and low-power logic, respectively. As these technologies are pursued, it is critical to h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7b3548250cebcf7931a3edfa83cde9
https://doi.org/10.1109/ted.2019.2901668
https://doi.org/10.1109/ted.2019.2901668
Autor:
F. Rush, Jerry B. Hook
Publikováno v:
Target Organ Toxicity ISBN: 9780429290299
The kidney is the predominant organ involved in regulation of extracellular volume and in control of electrolyte and acid base balance. The kidney is often the main site for excretion of many drugs and drug metabolites and is therefore exposed to a v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c7e67c0f0501f3f11cb1c9ca651b4d1
https://doi.org/10.4324/9780429290299-1
https://doi.org/10.4324/9780429290299-1
Publikováno v:
IEEE Transactions on Electron Devices. 65:4238-4244
In advanced technology nodes, an increase in power density, use of nonplanar architectures, and novel materials can aggravate local self-heating due to active power dissipation. In this paper, 3-D device simulations are performed to analyze thermal e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee01781e06d03232a42ff2c5fe1081f1
https://doi.org/10.1109/ted.2018.2863730
https://doi.org/10.1109/ted.2018.2863730
Publikováno v:
IEEE Transactions on Electron Devices. 65:3654-3661
Parameter variations in the transistor characteristics with new materials and process steps pose an increasing challenge for CMOS scaling to nanometer feature size. Alternate channel materials such as silicon–germanium (SiGe) for p-type field effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3acdd7ef266a0714ba2af718673cb251
https://doi.org/10.1109/ted.2018.2858748
https://doi.org/10.1109/ted.2018.2858748