Zobrazeno 1 - 10
of 844
pro vyhledávání: '"B. Hoefflinger"'
Autor:
Dai W; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Wang Y; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Li M; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Chen L; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Yan Q; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Yu J; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Jiang N; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Lin CT; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Sep; Vol. 36 (37), pp. e2311335. Date of Electronic Publication: 2024 Jun 26.
Publikováno v:
IEEE Micro. 13:57-66
A solution to autonomous lateral vehicle guidance using a neurocontroller that can learn from measured human-driving data without knowledge of the physical car parameters is discussed. Simulations and practical tests confirm that a small-size feedfor
Autor:
B. Hoefflinger, G. Roos
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:1067-1072
Presents circuit design for a three-dimensional (3D) CMOS integrated process. This process, with its three stacked transistor channels, leads to the very efficient basic circuits: inverter, selector, and NAND2. These elements are used to build a comp
Publikováno v:
Microelectronic Engineering. 15:191-194
Epitaxial lateral overgrowth of Si over oxide has been perfected to yield dual-gate transistor stacks with three stacked channels providing high and matched transconductances. Threshold voltage with standard deviation ranging from 50mV to 110mV allow
Publikováno v:
IEEE Journal of Solid-State Circuits. 25:396-402
In a semicustom design environment with unified transistor geometries, logic circuit optimization is achieved using an efficient physical circuit implementation. In particular, the semicustom realization of domino logic is demonstrated with a standar
Autor:
B. Hoefflinger, R. P. Zingg
Publikováno v:
Microelectronic Engineering. 10:115-126
We present a fabrication sequence which yields controlling isolated gates both above and below a conductance-modulated silicon film. Selective lateral overgrowth is performed for the first time with trichlorosilane, circumventing contamination proble
Autor:
G. Chen, R. Springer, M. Schau, T. Schwederski, J. Kernhof, W. Haas, M. Beunder, B. Hoefflinger
Publikováno v:
Proceedings., Eighth University/Government/Industry Microelectronics Symposium.
The authors describe the development of the CMOS GATE FOREST design and fabrication environment. They discuss the advantages of a semicustom solution, the advanced design tools that are being developed, the fabrication process including the applicati
Autor:
M. Beunder, B. Hoefflinger, J. Kernhof, R. Springer, T. Zimmermann, W. Klingler, M. Winkler, U. Apel
Publikováno v:
RSP
The current level of complexity supported by semiconductor technology reaches beyond one million transistors on a single chip. This allows the integration of complete systems into one chip. Current designs however, are usually far away from this uppe
Publikováno v:
[Proceedings] EURO ASIC `90.
Describes the design of a pad library for a semi-custom array family. It discusses the requirements defined by the application environment of semi-custom arrays. These requirements are subsequently translated into components and their respective char
Publikováno v:
Proceedings International Conference on Microelectronic Test Structures.
A test structure and a measurement method were developed allowing the analog measurement of fast signals at internal circuit nodes. The measurement method is based on the sampling principle. The test structure acts as a sampling probe integrated on c