Guidelines for the management of acne: recommendations from a French multidisciplinary group

Autor: Viet-Thi Tran, P. Berger, Anne Bachelot, P. Henry, F. Beer, O. Romain, S. Brugère, G. Do-Pham, J. Gand-Gavanou, Tristan Ferry, Bernard Guillot, Annabel Maruani, O. Join-Lambert, M. Chastaing, B. Guigues, Bruno Sassolas, L. Le Cleach, E. Lavie, Bénédicte Lebrun-Vignes, R. Khallouf

Publikováno v: British Journal of Dermatology
British Journal of Dermatology, Wiley, 2017, 177 (4), pp.908--913. ⟨10.1111/bjd.15843⟩
British Journal of Dermatology, 2017, 177 (4), pp.908--913. ⟨10.1111/bjd.15843⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2033775b77dc5b1ced51f6342390ce46
https://hal.archives-ouvertes.fr/hal-01743296

[Not Available]

Autor: L, Le Cleach, B, Lebrun-Vignes, A, Bachelot, F, Beer, P, Berger, S, Brugère, M, Chastaing, G, Do-Pham, V, Ertel-Pau, T, Ferry, J, Gand-Gavanou, B, Guigues, O, Join-Lambert, P, Henry, R, Khallouf, E, Lavie, A, Maruani, O, Romain, B, Sassolas, V T, Tran, B, Guillot

Publikováno v: Archives de pediatrie : organe officiel de la Societe francaise de pediatrie. 23(2)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::5a28f481fdbd6754de8baadfe2d2c1e2
https://pubmed.ncbi.nlm.nih.gov/26774894

In situ microwave characterisation of medium-k HfO2 and high-k SrTiO3 dielectrics for metal–insulator–metal capacitors integrated in back-end of line of integrated circuits

Autor: Alexis Farcy, B. Guigues, Joaquim Torres, Y. Morand, Emmanuel Defay, T. Bertaud, Serge Blonkowski, Bernard Flechet, T.T. Vo, Cedric Bermond, Thierry Lacrevaz

Publikováno v: IET Microwaves, Antennas & Propagation. 2:781-788

Integration of high permittivity dielectrics or commonly named high- k dielectrics is widely investigated as a way to reduce passive component size in the chip. The complex permittivity microwave characterisation of medium- k materials such as HfO 2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9ffe7a1b048a77141df58fcfc6fa5a3
https://doi.org/10.1049/iet-map:20070344

[DVT and combined oral contraceptives: update of the pluridisciplinary CNGOF-FNCGM-GEHT-SFMV group]

Autor: N, Chabbert-Buffet, B, Guigues, N, Trillot, C, Biron, P, Morange, G, Pernod, M, Scheffler, S, Brugere, B, Hedon

Publikováno v: Journal de gynecologie, obstetrique et biologie de la reproduction. 42(4)

Thrombotic risk among combined oral contraceptives (COC) users has recently been debated following a court action initiated by a patient. Recent epidemiological data, as well as accumulating biological data underlying these data, have led French Heal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::1f9fad8aa0b1caf56b7990a66d6a4152
https://pubmed.ncbi.nlm.nih.gov/23642503

Germanium/HfO/sub 2//TiN gate stacks for advanced nodes: influence of surface preparation on MOS capacitor characteristics

Autor: Olivier Kermarrec, Laurent Clavelier, C. Le Royer, Olivier Renault, Y. Campidelli, Claude Tabone, Simon Deleonibus, Y. Morand, J.M. Hartmann, B. Guigues, X. Garros, Virginie Loup, Eugénie Martinez, Vincent Cosnier

Publikováno v: Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

For the first time, we report electrical and physical characterization of metal-oxide-semiconductor (MOS) capacitors fabricated on 2.5/spl mu/m epitaxial germanium layers grown on (100) silicon. These capacitors were made using HfO/sub 2/ as the diel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e768aa50fa9725c6ef593bd307a6bfb4
https://doi.org/10.1109/essder.2005.1546594