Zobrazeno 1 - 10
of 48
pro vyhledávání: '"B. Gorenstein"'
Publikováno v:
Applied Surface Science. 315:523-526
The main problems preventing wide spreading of solar cells as alternative energy sources are their high cost and low efficiency. Efficiency of solar cells based on semiconductor materials is limited due to high electrical and optical losses and due t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95db8a599428c010c3487c4e140b999f
https://doi.org/10.1016/j.apsusc.2013.12.169
https://doi.org/10.1016/j.apsusc.2013.12.169
Publikováno v:
Microelectronics Reliability. 51:2119-2123
Vanadium oxide VO2 is a material that transforms from semiconductor to a metal state at a temperature of 67 °C. This phase transformation is accompanied by a dramatic change in its electrical and optical properties. Therefore, vanadium oxide thin fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b661e8b3a3e1797e9638e951c181dde
https://doi.org/10.1016/j.microrel.2011.07.024
https://doi.org/10.1016/j.microrel.2011.07.024
Publikováno v:
Thin Solid Films. 518:4520-4524
Zinc oxide (ZnO) thin films have attracted great attention in recent years due to their unique piezoelectric and piezooptic properties, making them suitable for various microelectronics and optoelectronics applications, such as surface acoustic wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26201a6ae61595321c9ca45a8cddb73b
https://doi.org/10.1016/j.tsf.2009.12.021
https://doi.org/10.1016/j.tsf.2009.12.021
Publikováno v:
Thin Solid Films. 515:8446-8449
In this work we present first results on the synthesis of vanadium oxide semi-transparent conducting thin films of p - and n -types. The films were deposited by thermal evaporation method in vacuum, on: silicon, glass, sapphire, and gold substrates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa07d9c21302648a3a737a30d5f23826
https://doi.org/10.1016/j.tsf.2007.04.011
https://doi.org/10.1016/j.tsf.2007.04.011
Publikováno v:
Applied Surface Science. 253:6608-6611
Transparent conductive oxide (TCO) thin films play a significant role in recent optical technologies. Displays of various types, photovoltaic systems, and opto-electronic devices use these films as transparent signal electrodes. They are used as heat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce575e554b9bbe915d11a88bbb0c8531
https://doi.org/10.1016/j.apsusc.2007.01.030
https://doi.org/10.1016/j.apsusc.2007.01.030
Publikováno v:
Microelectronics Journal. 37:1538-1542
Silicon carbide (SiC) is becoming one of the most important electronic materials in recent years. Single crystalline SiC is a wide-bandgap semiconductor, which finds a wide range of applications in high temperature, power consuming, and fast-acting e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::219c9ac8abe69da8a824ce05be076f57
https://doi.org/10.1016/j.mejo.2006.05.016
https://doi.org/10.1016/j.mejo.2006.05.016
Publikováno v:
Microelectronics Journal. 37:910-915
Electrical, optical, and mechanical properties of thin films significantly differ from those of bulk materials. Therefore, characterization methods for evaluation of thin film properties became highly important. A novel approach to the well known “
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d587017a369da59e94f69769e609eca
https://doi.org/10.1016/j.mejo.2006.01.014
https://doi.org/10.1016/j.mejo.2006.01.014
Publikováno v:
Plasma Devices and Operations. 13:9-18
Low-pressure plane plasma discharge is a novel technique for thin film growth. It makes possible fine control of most of the sputtering parameters, as well as supporting a high growth rate. A low-pressure plane argon plasma was obtained in a triode s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79c0eaeb5daeb1bb006b4ea884a8793d
https://doi.org/10.1080/10519990412331317074
https://doi.org/10.1080/10519990412331317074
Publikováno v:
Microelectronics Journal. 34:255-258
Vanadium oxide films (VO 2 ) are of a typical phase transition ranging between metal phase to a semi-conducting phase. The theoretical metamorphose temperature of VO 2 is around 340 K (67 °C). This transition temperature is mostly governed by the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4400b0ae3f5d49f9bd4246f06b83f4d
https://doi.org/10.1016/s0026-2692(03)00002-8
https://doi.org/10.1016/s0026-2692(03)00002-8
Publikováno v:
Microelectronics Reliability. 43:509-512
A novel system of integrated thin-film heater with an embedded thermocouple was developed. Thin-film metallic heaters are widely used today in various fields of electronics and microelectronics applications. The main goal of the heater is usually to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::207900cc291533d47870a9fd8bd999be
https://doi.org/10.1016/s0026-2714(02)00320-7
https://doi.org/10.1016/s0026-2714(02)00320-7