Zobrazeno 1 - 10
of 46
pro vyhledávání: '"B. Golja"'
Autor:
P.M. Smith, P. Seekell, L. Mt. Pleasant, P.C. Chao, H. Karimy, Xiaoping Yang, R. Isaak, G. Cueva, R. A. Carnevale, L. Schlesinger, R. G. Stedman, Kanin Chu, Dong Xu, K.H.G. Duh, Alice Vera, W. Kong, B. Golja, Lee Mohnkern
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:393-398
We report the design, fabrication and characterization of metamorphic high electron-mobility transistors (MHEMTs) with self-aligned ohmic electrodes. In this work, asymmetrically recessed 50-nm Γ-gates have been successfully used as the shadow mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e535e01a4f98357681968d6391ebb84
https://doi.org/10.1142/s0129156411006672
https://doi.org/10.1142/s0129156411006672
Autor:
B. Golja, N.E. Byer, S.W. Duncan, Sander Weinreb, S.P. Svensson, Abdollah Eskandarian, B.C. Kane, D.-W. Tu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 42:2590-2597
Five versions of monolithic W-band 0.1 /spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic HEMT, four-stage, low noise amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf2255b1e94355847ff85d3b93d61168
https://doi.org/10.1109/22.339801
https://doi.org/10.1109/22.339801
Akademický článek
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Akademický článek
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Autor:
S.W. Duncan, S.E. Brown, E. Fischer, Abdollah Eskandarian, N.E. Byer, W.P. Berk, B. Golja, S.P. Svensson, B.C. Kane, D.-W. Tu, D.M. Gill, S. Weinreb
Publikováno v:
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156dd1b4c90173661e9a6aca1356a9b2
https://doi.org/10.1109/mcs.1994.332149
https://doi.org/10.1109/mcs.1994.332149
Autor:
S.W. Duncan, M. Zimmerman, S. Weinreb, Abdollah Eskandarian, N.E. Byer, S.P. Svensson, D.M. Gill, B. Golja, B. Power, D.-W. Tu
Publikováno v:
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
A monolithic, three-stage W-band power amplifier, developed using pseudomorphic HEMTs, has exhibited record gain, power per unit gate width, and power per unit area. The amplifier has a small signal gain of 22-dB and an output power of 37-mW with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aa61689427caa04e820f1fca3402975
https://doi.org/10.1109/mcs.1994.332148
https://doi.org/10.1109/mcs.1994.332148
Autor:
S.P. Svensson, B. Golja, S.B. Southwick, D.C. Martel, S.W. Duncan, Abdollah Eskandarian, B. Power, M.W. Trippe, D.-W. Tu, S. Weinreb, G. Mendenilla, N.E. Byer, H.B. Sequeira
Publikováno v:
IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.
Monolithic W-band amplifiers and a novel W-band mixer fabricated using a 0.1 mu m pseudomorphic MODFET technology are presented. Single-stage W-band amplifiers delivered 8.5-dB gain; four-stage units showed 23-dB maximum gain or 4.5-dB noise figure,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39d09143c9bc3c8b8897ef86fabbb1d7
https://doi.org/10.1109/mcs.1991.148086
https://doi.org/10.1109/mcs.1991.148086
Autor:
Abdollah Eskandarian, N.E. Byer, B. Golja, D.-W. Tu, S. Weinreb, S.P. Svensson, D.C. Martel, S.B. Southwick, M.W. Trippe, H.B. Sequeira, S.W. Duncan
Publikováno v:
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).
A unique realization of a single-stage monolithic GaAs W-band amplifier based on InGaAs-AlGaAs pseudomorphic (PM) MODFET devices is reported. This work reflects a number of significant accomplishments: (1) superior control of MBE to grow the PM layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f39dcac6264402ebaba747c41ae13f26
https://doi.org/10.1109/gaas.1990.175476
https://doi.org/10.1109/gaas.1990.175476
Publikováno v:
IEEE Microwave and Guided Wave Letters. 3:29-31
Results on a via-hole interconnect that links a coplanar waveguide (CPW) on one side of a 100 mu m-thick GaAs substrate to a microstrip line on the opposite side are presented. The measured insertion loss of a pair of back-to-back connections is 0.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a7e0e2512267edb4d5b14147f9ef3a0
https://doi.org/10.1109/75.196031
https://doi.org/10.1109/75.196031