Zobrazeno 1 - 8
of 8
pro vyhledávání: '"B. G. Pihlstrom"'
Autor:
A. D. Simone, J. Lurkins, G. J. Collins, L. R. Thompson, B. G. Pihlstrom, D. M. Shaw, T. Y. Sheng
Publikováno v:
Journal of Electronic Materials. 22:81-86
Removed from the deposition region, an upstream hydrogen microwave plasma generates arsenic hydrides by etching the surface of solid arsenic. The hydrides are transported to the deposition region and mixed with trimethylgallium to achieve low tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::113050634b3c8f3db8758cb74becdbaa
https://doi.org/10.1007/bf02665727
https://doi.org/10.1007/bf02665727
Publikováno v:
Journal of Applied Physics. 70:3329-3332
The downstream near afterglow region of a hydrogen plasma is used to decompose and convert trimethylarsine (TMAs) into methylarsine homologs [(CH3)3−xAsHx, where x=1,2,3] including that of arsine (x=3). Approximately 30%, 17%, and 10% of the TMAs i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c8e266c597b03cc789376e4aba36e3
https://doi.org/10.1063/1.349266
https://doi.org/10.1063/1.349266
Publikováno v:
Solar Cells. 30:415-418
A downstream near afterglow plasma was used to deposit epitaxial GaAs at substrate temperatures as low as 300 °C. Feedstock organometallics of trimethylgallium and trimethylarsenic were employed at a ratio of 1:2, respectively. The observed growth r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b3b26b4c2d3d01327451c0377f098f4
https://doi.org/10.1016/0379-6787(91)90074-y
https://doi.org/10.1016/0379-6787(91)90074-y
Publikováno v:
Applied Physics Letters. 60:3144-3146
In situ generated arsenic hydrides are reacted downstream with trimethylgallium (TMGa), both in the presence of and in the absence of a downstream hydrogen afterglow plasma. The homoepitaxial activation energy dramatically changes from 62 kcal/mol fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0e8b9b609b2cd4fc707401c476a534
https://doi.org/10.1063/1.106750
https://doi.org/10.1063/1.106750
Autor:
L. R. Thompson, T. Y. Sheng, D. M. Shaw, A. D. Simone, George Collins, B. G. Pihlstrom, J. Lurkins
Publikováno v:
AIP Conference Proceedings.
Removed from the deposition region, an upstream hydrogen microwave plasma generates arsenic hydrides by etching the surface of solid arsenic. The hydrides are transported to the deposition region and mixed with trimethylgallium to achieve low tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ef4ef24d93dcb135f1da94c153d2c7c
https://doi.org/10.1063/1.42931
https://doi.org/10.1063/1.42931
Publikováno v:
MRS Proceedings. 201
A spatially confined disk shaped hydrogen plasma is used for plasma assisted organometallic vapor phase epitaxy (PAOMVPE) of GaAs at substrate temperatures from 245–430°C. Feedstock gases, trimethylgallium (TMGa) and trimethylarsenic (TMAs), are i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073417ae225349a400f4dcfdb69dc10f
https://doi.org/10.1557/proc-201-105
https://doi.org/10.1557/proc-201-105
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:348
A wide area windowless plasma disk excited by a soft vacuum electron beam provides a wide area uniform source of vacuum ultraviolet (VUV) photons as well as atomic radicals. Hydrogen and oxygen when excited by the soft vacuum electron beam, emit stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7abbb7ac0fd1a806f65355958d60f9d1
https://doi.org/10.1116/1.585573
https://doi.org/10.1116/1.585573
Publikováno v:
IEEE Journal of Quantum Electronics. 20:625-628
We have obtained CW laser action on four transitions in the doublet system of atomic fluorine for the first time. All previously reported laser action was on a pulsed basis only. CW laser radiation was obtained when F 2 or AgF was used as a fluorine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42b3aab057c9e167cbe9a5c05217d6e
https://doi.org/10.1109/jqe.1984.1072454
https://doi.org/10.1109/jqe.1984.1072454