Zobrazeno 1 - 10
of 35
pro vyhledávání: '"B. G. Budaguan"'
Publikováno v:
Physica B: Condensed Matter. 325:394-400
An investigation of the influence of substrate temperature on optoelectronic properties and microstructure of a-SiGe:H films fabricated by low frequency 55 kHz PECVD method was carried out. It was found that the decrease of substrate temperature lead
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cd6078f154b455dbda6b424f1849731
https://doi.org/10.1016/s0921-4526(02)01692-7
https://doi.org/10.1016/s0921-4526(02)01692-7
Publikováno v:
Journal of Non-Crystalline Solids. 297:205-209
The optoelectronic properties and microstructure of a-SiGe:H films deposited by 55 kHz plasma enhanced chemical vapor deposition (PECVD) method were investigated. The growth rate of a-SiGe:H deposited by this method is larger in comparison to the com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6559692196cd8ce0bddc3a50807ff39f
https://doi.org/10.1016/s0022-3093(01)00928-0
https://doi.org/10.1016/s0022-3093(01)00928-0
Publikováno v:
Journal of Alloys and Compounds. 327:146-150
In this work the deposition process and the properties of a-SiC:H alloy fabricated for the first time by 55-kHz PECVD are investigated. It was found that 55-kHz PECVD allows to increase deposition rate of a-SiC:H films (5.3–11.1 A/s) in comparison
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c6ebfe3e49578b5aca3069e066aab6
https://doi.org/10.1016/s0925-8388(01)01422-0
https://doi.org/10.1016/s0925-8388(01)01422-0
Publikováno v:
Journal of Physics: Condensed Matter. 13:6615-6624
In this work a novel 55?kHz plasma-enhanced chemical vapour deposition (PECVD) technique for deposition of a-SiGe:H films at high deposition rates is developed. According to infrared spectroscopy and atomic force microscopy analysis the 55?kHz a-SiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb9e828af5aac4089a283744fbc1bef9
https://doi.org/10.1088/0953-8984/13/31/303
https://doi.org/10.1088/0953-8984/13/31/303
Publikováno v:
Physica B: Condensed Matter. 252:198-206
In this work we investigated the thermodynamics and kinetics of structural relaxation in a-Si:H films using differential scanning calorimetry (DSC). The relation between structural relaxation and light-induced metastability (Staebler–Wronski effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f2a8ff97f10c1b3306c180376cf6fc
https://doi.org/10.1016/s0921-4526(98)00151-3
https://doi.org/10.1016/s0921-4526(98)00151-3
Autor:
A. G. Radosel'sky, J. W. Metselaar, V. D. Chernomordic, A. A. Sherchenkov, D Stryahilev, A. A. Popov, B. G. Budaguan, Andrei Sazonov
Publikováno v:
Journal of The Electrochemical Society. 145:2508-2512
In this work, a-Si:H films with good electronic properties in spite of an inhomogeneous structure were prepared by the 55 kHz plasma enhanced chemical vapor high-rate deposition technique. The structural analysis using infrared spectroscopy and atomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb3677af5e0792da331f2502627aba25
https://doi.org/10.1149/1.1838669
https://doi.org/10.1149/1.1838669
Publikováno v:
Journal of Non-Crystalline Solids. 226:217-224
In this paper we measure microstructure and optical absorption edge of a-Si:H and silicon-rich a-SiN r :H films prepared at deposition rates ∼0.8 nm/s by radio frequency plasma enhanced chemical vapor deposition method from hydrogen diluted SiH 4 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91413f99e4d1bda3c8cad5cdbd3a0462
https://doi.org/10.1016/s0022-3093(98)00452-9
https://doi.org/10.1016/s0022-3093(98)00452-9
Autor:
Dmitriy W Zhuk, Andrei Sazonov, B. G. Budaguan, Mikhail N Bosyakov, Dmitriy I Grunsky, Alexander A. Popov
Publikováno v:
Journal of Non-Crystalline Solids. :39-42
Device-quality a-Si:H films were obtained in a 55 kHz glow discharge (GD) at a deposition rate of 1.5 nm/s. In the present work, this GD was investigated to clarify the mechanism of high-rate deposition. The investigations were performed in an indust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a12c5d8b3112e4cd9e7dc1d0a0d0e965
https://doi.org/10.1016/s0022-3093(98)00021-0
https://doi.org/10.1016/s0022-3093(98)00021-0
Publikováno v:
Journal of Non-Crystalline Solids. :100-104
We have found powder particles incorporated in device quality a-Si:H films. Investigations carried out by atomic force microscopy (AFM) have shown that these particles are of ∼200 nm in diameter and are more fragile than the rest of the film. SiH-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e0b0984abc7b849a84941f25bf265ad
https://doi.org/10.1016/s0022-3093(98)00026-x
https://doi.org/10.1016/s0022-3093(98)00026-x
Publikováno v:
Journal of Non-Crystalline Solids. :1123-1126
In this work a-Si:H/c-Si heterostructures with the electronic properties of a-Si:H were prepared by 55 kHz plasma enhanced chemical vapor deposition high-rate deposition technique. Current–voltage and capacitance–voltage properties of a-Si:H/c-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c126e07d505e7f746e3afb73444be11
https://doi.org/10.1016/s0022-3093(98)00289-0
https://doi.org/10.1016/s0022-3093(98)00289-0