Zobrazeno 1 - 10
of 28
pro vyhledávání: '"B. Flietner"'
Publikováno v:
Sensors and Actuators B: Chemical. 34:499-505
In the present paper the temperature dependence of the work function change is investigated for Ga2O3-thin films (D = 1, 10, 100, 1000 nm) in a temperature region between 80°C and 180°C. Testing gases are 100 ppm NO2 and 100 ppm NH3 in synthetic ai
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:278-285
Gas transport in narrow air channels (length‐to‐height ratio 1 mm/1 μm) is characterized by work function detectors like hybrid suspended gate field effect transistors (HSGFETs) with sensitive areas located in the middle of the channel. A thin p
Publikováno v:
Sensors and Actuators B: Chemical. 22:109-113
We have developed a novel hybrid technique for manufacturing gas-sensing field-effect structures (GasFETs) with an air gap. To prove the efficiency of the device, gas measurements with the well-known Pt (sensitive layer) and H 2 (gas) system have bee
Autor:
Ignaz Eisele, B. Flietner
Publikováno v:
Thin Solid Films. 250:258-262
Tin oxide films, 1, 2, 20, 50, 80 and 200 nm thick, were deposited on platinum and titanium/tungsten surfaces by reactive sputter deposition. The structure and composition of tin oxide as well as the film homogeneity were investigated by scanning ele
Publikováno v:
Sensors and Actuators B: Chemical. 19:632-636
We have developed a novel hybrid technique for manufacturing gas-sensing field-effect structures with an air gap. It is possible to find an optimum non-critical range for all technological parameters to ensure reliable evaluation of a work-function r
Publikováno v:
Sensors and Actuators B: Chemical. 19:678-681
We have developed a new hybrid technique for gas sensors based on field effect structures (GASFET). A wide range of materials can be used as sensitive layer (e.g., inorganic or organic, metal or oxide) for a selective detection of different gases. GA
Publikováno v:
Sensors and Actuators B: Chemical. 12:231-235
The adsorption at the open insulator surface under the air gap of suspended-gate field-effect transistors (SGFETs), which leads to mobile charges, and their redistribution due to lateral electrical field strengths are two of the reasons for the thres
Publikováno v:
Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95.
Autor:
P. Wensley, Norman Robson, B. Lemaitre, E. Demm, F. Grellner, C. Wann, P. Kim, Klaus Schruefer, Robert C. Wong, G. Friese, G. Knoblinger, O. Prigge, R. Zoeller, Robert Hannon, J. Barth, G. Brase, Mark Hoinkis, Reinhard Mahnkopf, J. Pape, S.S. Iyer, T. Schiml, B. Flietner, K. Han, K. Holloway, F. Towler, Michael D. Armacost, A. Augustin, Nivo Rovedo, R. Busch, R. Mih, Terence B. Hook, W. Neumueller, G. Dietz, Chih-Yung Lin, B. Chen, S. Srinivasan, M. Stetter, Herbert L. Ho, Thomas Schafbauer, K.-H. Allers
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
A 0.18 /spl mu/m high performance/low power technology platform is described which allows 'system on a chip integration' for a broad spectrum of products. Based on a generic digital process additional modules can be added in a modular and cost effect
Autor:
R. Divakaruni, T.C. Chen, B. Flietner, Gary B. Bronner, Y. Matsubara, J. Mandelman, Hiroyuki Akatsu, Rajesh Rengarajan, Kazumasa Sunouchi, R. Mohler, D. Wheeler, Q. Ye, Paul C. Parries, J. Alsmeier, Ying Li
Publikováno v:
1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453).
Aggressive scaling of the DRAM cell size requires minimum dimensions in both the channel length and the channel width of the array pass transistor. As a result of the stringent leakage current requirement, the design for the array MOSFET becomes incr