Zobrazeno 1 - 10
of 14
pro vyhledávání: '"B. Fatemizadeh"'
Autor:
B. Fatemizadeh, D. Silber
Publikováno v:
Proceedings of IEEE Power Electronics Specialist Conference - PESC '93.
Based on general semiconductor device equations and results of two-dimensional modeling (PISCES), an analytical insulated gate bipolar transistor (IGBT) model has been developed. Temperature effects in the range 250-450 K are considered. The electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c32ace7837e6e0f2af25b1f931034ef0
https://doi.org/10.1109/pesc.1993.471939
https://doi.org/10.1109/pesc.1993.471939
Autor:
B. Fatemizadeh, P.O. Lauritzen
Publikováno v:
5th IEEE Workshop on Computers in Power Electronics.
This paper presents a new bipolar junction transistor (BJT) modeling approach using an analytical method which provides sufficient accuracy for most power electronics applications with fast simulation times. This new analytical model includes all imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2757ee4bdc965c275d46dbaef7d611e
https://doi.org/10.1109/cipe.1996.612348
https://doi.org/10.1109/cipe.1996.612348
Publikováno v:
5th IEEE Workshop on Computers in Power Electronics.
The problems and future trends of the modeling of power devices are reviewed and the different modeling methods compared as to their compromise between convenience, accuracy, numerical efficiency and accuracy in implementing physical effects. Many of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b47d13a7381d2e7b241611721c5dfae
https://doi.org/10.1109/cipe.1996.612346
https://doi.org/10.1109/cipe.1996.612346
Publikováno v:
PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.
The power BJT is modeled using the lumped-charge method using simplified forms of the Poisson's equation, the continuity equation and the Boltzmann relation. All important one-dimensional effects are included in the model. Only nine parameters are ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e525fdbf1ffaa14a65f22046dcf02bb
https://doi.org/10.1109/pesc.1996.548558
https://doi.org/10.1109/pesc.1996.548558
Publikováno v:
Proceedings of Applied Power Electronics Conference. APEC '96.
The authors present a user-optimized electro-thermal IGBT model for power electronic circuit simulation. The proposed model has been efficiently implemented in the circuit simulator ELDO for the purpose of reaching low simulation time and high conver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14dff2ff7b2f7968c4cd9f277794eb9c
https://doi.org/10.1109/apec.1996.500426
https://doi.org/10.1109/apec.1996.500426
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda66df90e72c682b3e993676c9551d8
https://doi.org/10.1109/ispsd.1994.583676
https://doi.org/10.1109/ispsd.1994.583676
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173725
A network model for the insulated gate bipolar transistor (IGBT) is presented for circuit analysis programs, such as PSPICE and SABER. The model contains a fast and rather accurate description of internal plasma dynamics, and accounts for shorted-ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c246924b03c337d39122e1a1c380602
https://doi.org/10.1007/978-3-7091-6657-4_83
https://doi.org/10.1007/978-3-7091-6657-4_83
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