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Autor:
William Paul, J. Bodart, W. A. Turner, Y.M. Li, M. L. Thèye, A. E. Wetsel, Francisco C. Marques, B. F. Bateman, D. Pang, S. J. Jones, Paul Wickboldt, R. E. Norberg, J. H. Chen, I. El Zawawi
Publikováno v:
Journal of Applied Physics. 67:7430-7438
High‐quality amorphous hydrogenated germanium has been deposited using the diode rf glow discharge method out of a gas plasma of GeH4 and H2. The optical, electrical, and structural properties of this material have been extensively characterized. T