Zobrazeno 1 - 10
of 28
pro vyhledávání: '"B. Emmerstorfer"'
Publikováno v:
Journal of Crystal Growth. 248:405-410
In this work, we study the growth evolution of InP stripes deposited between dielectric masks aligned to [0 1 1] on (1 0 0) InP substrates. Ridge formations are observed adjacent to the mask, which cannot be quantitatively described by existing selec
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:648-651
Selective area epitaxy of InP on masked (100) InP substrates is studied. InP layers are deposited between pairs of SiO2 stripes using low-pressure metalorganic chemical vapor deposition. Layer thickness is investigated by surface profiling and scanni
Autor:
B. Emmerstorfer, D.G. Knight
Publikováno v:
Journal of Crystal Growth. 125:449-456
The incorporation and activation of Fe in InP has been studied using ferrocene as a dopant source in low pressure MOCVD. An iron activation energy of 0.9 eV is found with no dependence of the total Fe concentration on PH 3 flow, which is contrary to
Publikováno v:
Journal of Electronic Materials. 21:165-171
Semi-insulating Fe doped InP has been grown by low pressure MOCVD at 100 mbar and 630° C. Complete activation of Fe below the solubility limit of 5 × 1016 cm-3 has been achieved by reducing the PH3 concentration during crystal growth to the lowest
Publikováno v:
Journal of Electronic Materials. 21:173-179
Diffusion of Zn in InP during growth of InP epitaxial layers has been investigated in layer structures consisting of Zn-InP epilayers grown on S-InP and Fe-InP substrates, and on undoped InP epilayers. The layers were grown by metalorganic chemical v
Autor:
B. Emmerstorfer, R. Mallard, E. Jamroz, R. Rousina-Webb, K. Klunder, S. An, S. Smetona, M. Rouabbi
Publikováno v:
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).
We report on a study of the impact of mechanical stress on the electrical properties of InP-based avalanche photodiodes used in OC48 and OC192 10 Gb/s fiber-optic communication applications. The device structure under study consists of separate absor
Publikováno v:
Journal of Crystal Growth. 84:431-435
The use of Cd as a p-type dopant during the growth of InP by metalorganic chemical vapour deposition (MOCVD) has been investigated. Trimethylindium, phosphine and dimethylcadmium (DMCd) were used as sources of In, P and Cd, respectively. The effect o
Publikováno v:
Journal of Electronic Materials. 13:251-262
The effectiveness of plasma-deposited SiNx and chemical-vapor-deposited SiO2 as masks for localized diffusion at 600°C of Zn in GaAs has been investigated. Variables included the diffusion time (0.25-16 hrs), and the mask thickness (0.1-0.5 Μm) for
Publikováno v:
Canadian Journal of Physics. 63:664-669
GaAs epitaxial layers have been grown on semi-insulating GaAs substrates using the technique of metalorganic chemical-vapour deposition. The organometallic compounds trimethylgallium and trimethylgallium–trimethylarsenic adduct were used as source
Publikováno v:
Applied Physics Letters. 50:77-79
Auger analysis of oxidized GaAs surfaces, heat treated in vacuo, has been used to establish an accurate value for the oxide desorption temperature Tox. Major differences are found in the value of Tox for the surface oxides produced by thermal and ozo