Zobrazeno 1 - 10
of 15
pro vyhledávání: '"B. Eljani"'
Publikováno v:
Journal of Luminescence. 131:1007-1012
Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f257ab5ab1cfd69ad543758ce085cd
https://doi.org/10.1016/j.jlumin.2011.01.012
https://doi.org/10.1016/j.jlumin.2011.01.012
Autor:
F. Ben Nasr, H.-J. Fitting, Z. Fakhfakh, Roushdey Salh, T. Boufaden, Adel Matoussi, Samir Guermazi, B. Eljani
Publikováno v:
Journal of Luminescence. 130:399-403
GaN films have been grown on porous silicon at high temperatures (800–1050 °C) by metal organic vapor phase epitaxy. The optical properties of GaN layers were investigated by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. PL spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9835dab5ac6e5fa3c8213f642ed840c1
https://doi.org/10.1016/j.jlumin.2009.10.003
https://doi.org/10.1016/j.jlumin.2009.10.003
Autor:
B. Eljani, Adel Matoussi, F. Ben Nasr, Roushdey Salh, Z. Fakhfakh, Samir Guermazi, H.-J. Fitting, T. Boufaden
Publikováno v:
Materials Letters. 62:515-519
Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951665c77a86f6d660ac55fa838df97a
https://doi.org/10.1016/j.matlet.2007.05.079
https://doi.org/10.1016/j.matlet.2007.05.079
Publikováno v:
physica status solidi (c)
physica status solidi (c), Wiley, 2002, b 240, pp.160-168. ⟨10.1002/pssb.200301870⟩
physica status solidi (c), Wiley, 2002, b 240, pp.160-168. ⟨10.1002/pssb.200301870⟩
In this paper we report electron beam induced current (EBIC) measurements on Schottky diodes on undoped GaN samples grown by the metal organic vapor phase epitaxy method on porous silicon substrates. A 2D simulation model was applied to perform the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3ac1f42099394912f60f9796b3f1aba
https://doi.org/10.1002/pssb.200301870
https://doi.org/10.1002/pssb.200301870
Publikováno v:
Semiconductor Science and Technology. 18:445-448
Vanadium(V)-doped GaAs layers grown by metal organic vapour phase epitaxy using vanadium tetrachloride as a doping source were characterized by deep level transient spectroscopy. The only deep level detected in undoped GaAs is EL2. After V doping, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91570569c2550babf198e1295b647f9e
https://doi.org/10.1088/0268-1242/18/6/309
https://doi.org/10.1088/0268-1242/18/6/309
Publikováno v:
Microelectronics Journal. 33:961-965
The spectral response of n-GaN Schottky photodiode is calculated for various metals including gold (Au), palladium (Pd), nickel (Ni) and platinum (Pt). The choice of the used metal is discussed. Responsivity increases with increase in the metal workf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c1e2c22dd80fe47e11d546b209a379e
https://doi.org/10.1016/s0026-2692(02)00077-0
https://doi.org/10.1016/s0026-2692(02)00077-0
Autor:
F. Ben Nasr, A. Matoussi, R. Salh, T. Boufaden, S. Guermazi, H.-J. Fitting, B. Eljani, Z. Fakhfakh, Mourad Telmini, Najeh Thabet Mliki, Ezeddine Sediki
Publikováno v:
AIP Conference Proceedings.
In this work, we report the theoretical and experimental results of cathodoluminescence (CL) from GaN layers with thickness (1–3) micron grown at 800 °C by MOVPE on silicon substrate. The CL measurements were performed in a digital scanning electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c47d3091b3da11c444bc56e7869c1d98
https://doi.org/10.1063/1.2795429
https://doi.org/10.1063/1.2795429
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