Zobrazeno 1 - 10
of 89
pro vyhledávání: '"B. E. Weir"'
Publikováno v:
Microelectronics Reliability. 45:427-436
Transmission line pulse (TLP) measurements are used to demonstrate that oxynitride breakdown projections from DC measurements using conventional area and voltage-scaling techniques can be extended to the nanosecond time-scale. ESD protection systems
Autor:
Don Monroe, Gregory Timp, Frieder H. Baumann, Yi Ma, P. J. Silverman, D. Hwang, Muhammad A. Alam, B. E. Weir, J. Bude, A. Hamad, M.M. Brown, A. Ghetti, G.D. Wilk, T.W. Sorsch
Publikováno v:
Solid-State Electronics. 46:321-328
We describe the reliability projection methods currently used and show that 1.6 nm oxides are sufficiently reliable even if soft breakdown is considered the point of failure. We also explore the possibility of using oxides after soft breakdown.
Publikováno v:
IEEE Transactions on Electron Devices. 49:239-246
For Part I see ibid., vol.49, no.2, pp.232-8 (2002). Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft br
Publikováno v:
IEEE Transactions on Electron Devices. 49:232-238
A theory of the statistical origin of soft and hard breakdown, that can explain a wide range of experimental data, is proposed. The theory is based on the simple premise that the severity of breakdown depends on the magnitude of the power dissipation
Publikováno v:
Microelectronic Engineering. 59:137-147
The present status of computational models for oxide reliability and their success in interpreting the experimental data are reviewed. We find that significant progress has been made in theoretical modeling of all aspects of reliability, and this und
Publikováno v:
Microelectronic Engineering. 59:17-23
We observe soft breakdowns at all positions along the gates of N-MOSFETs when testing is performed at low voltage or with low current compliance. Devices whose breakdown spots are at or near the gate–drain overlap region have the highest off-curren
Autor:
P Mason, T. Sorsch, Frieder H. Baumann, Don Monroe, A. Hamad, Yi Ma, J. Bude, A Ghetti, P. J. Silverman, D. Hwang, Muhammad A. Alam, B. E. Weir, Gregory Timp, M.M. Brown, Philip W. Diodato
Publikováno v:
Semiconductor Science and Technology. 15:455-461
The important components of reliability projection are investigated. Acceleration parameters are obtained for a 1.6 nm oxide with a soft breakdown criterion. Based on the physical percolation model, the voltage scaling factor for time to breakdown is
Autor:
Vincent M. Donnelly, J. Sapjeta, Jane P. Chang, J. Eng, Torgny Gustafsson, P. J. Silverman, H. C. Lu, Eric Garfunkel, Martin L. Green, B. E. Weir, Robert L. Opila
Publikováno v:
Journal of Applied Physics. 87:4449-4455
Angle-resolved x-ray photoelectron spectroscopy (AR–XPS) is utilized in this work to accurately and nondestructively determine the nitrogen concentration and profile in ultrathin SiOxNy films. With furnace growth at 800–850 °C using nitric oxide
Autor:
Martin L. Green, B. E. Weir, T.W. Sorsch, P. J. Silverman, David A. Muller, Y.O. Kim, S. Moccio, Gregory Timp
Publikováno v:
Microelectronic Engineering. 48:25-30
In spite of its many attributes such as nativity to silicon, low interfacial defect density, high melting point, large energy gap, high resistivity, and good dielectric strength, SiO 2 suffers from one disadvantage, low dielectric constant (K=3.9). T
Autor:
Paul E. Dodd, Martin L. Green, G.L. Hash, P.J. Silverman, L.P. Schanwald, K.S. Krisch, F.W. Sexton, Marty R. Shaneyfelt, Daniel M. Fleetwood, B. E. Weir, R.A. Loemker
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2509-2518
No correlation was observed between single-event gate rupture (SEGR) and precursor damage by heavy-ion irradiation for 7-nm thermal and nitrided oxides. Precursor ion damage at biases below SEGR threshold for fluence variations over three orders of m