On the charge-transport mechanisms in Cr-n-InP and Mo-n-InP diode structures

Autor: S. V. Slobodchikov, B. E. Samorukov, Kh. M. Salikhov

Publikováno v: Semiconductors. 37:936-939

Electrical characteristics of Cr-n-InP and Mo-n-InP diode structures were investigated, and the charge-transport mechanism was estimated. It was established that this is either a thermionic or generation-recombination current that dominates in the Cr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::580e957b70af03eab8de50977645d715
https://doi.org/10.1134/1.1601662

Charge transport in Fe-p-InP diode structures

Autor: S. V. Slobodchikov, B. E. Samorukov, Kh. M. Salikhov

Publikováno v: Semiconductors. 37:183-186

The mechanism of charge transport in Fe-p-InP diode structures and its dependences on illumination and magnetic field were investigated. It is shown that a double injection in a drift approximation into a high-resistivity π-layer is the main mechani

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f37bd1adffbbff93af1a5c74dc55569
https://doi.org/10.1134/1.1548662

Mechanisms of photocurrent amplification in isotypic n +-GaSb-n 0-GaInAsSb-n +-GaAlAsSb heterostructures

Autor: S. V. Slobodchikov, Yu. P. Yakovlev, Kh. M. Salikhov, B. E. Samorukov

Publikováno v: Technical Physics Letters. 24:386-387

Measurements of the current-voltage characteristics, the photocurrent, and its dependence of the latter on the bias voltage (forward and reverse) and the magnetic field were used to determine the current transport mechanisms in isotypic n+-GaSb-n0-Ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cf3f7d14a82bae2966f65a588d17657
https://doi.org/10.1134/1.1262100

Abstracts of papers deposited at VINITI

Autor: V. N. Gorshenkov, D. F. Morozov, N. M. Gasanly, L. G. Musaeva, R. M. Sardarly, R. T. Kuznetsova, R. M. Fofonova, M. I. Bashmakova, O. A. Kotlyarevskaya, G. I. Kuz'menko, L. Ya. Levitan, G. I. Khramtsov, A. V. Shapko, A. S. Zakharov, V. A. Nikitinskii, D. I. Vaisburd, I. P. Rudamenko, S. B. Matlis, V. F. Masterov, B. E. Samorukov, K. F. Shtel'makh, B. V. Chernovets, S. N. Zharov, V. M. Rudyak, I. I. Perepechko, A. V. Prokazov, M. S. Tunin, M. I. Tunina, L. P. Andreeva, G. V. Nazarova, S. Ya. Khokhlov, V. M. Chetverikov, A. S. Kim, N. E. Ainbinder, V. F. Nyavro, V. E. Egorushkin, A. I. Nazhalov, V. A. Popov, E. P. Fadin, I. G. Minaev, V. M. Sharapov, M. P. Arbuzov, B. I. Kotlyar, M. M. Yatsura, E. S. Vasilina, N. A. Romanyuk, V. A. Zhdanov, V. V. Polyakov, P. R. Ferents, G. A. Rozman, B. F. Minaev, A. I. Grigor'ev, N. R. Bochvar, E. V. Lysova, V. I. Popov, A. A. Popova, E. M. Bashirov, G. G. Bashirova, V. V. Obukhov, S. I. Masharov, G. A. Shul'man, V. I. Simakov, A. A. Tukhfatullin, I. A. Moroz, A. A. Bryukhanov, N. F. Nechiporenko, V. S. Ivanin, G. M. Ryabova, A. I. Sokolenko, V. I. Sokolenko, A. F. Krylov, I. S. Zakharov, P. A. Petukhov, V. M. Skorikov, P. P. Akinfiev, V. M. Adrianov

Publikováno v: Soviet Physics Journal. 21:1515-1528

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03d4d7e0f47771e28976fb55a38448bc
https://doi.org/10.1007/bf00890376

Liquid epitaxy growth of InP layers

Autor: I. A. Kuz'min, M. A. Sokolova, B. E. Samorukov, L. F. Zakharenkov

Publikováno v: Soviet Physics Journal. 28:539-542

This paper is concerned with the investigation of the process of liquid epitaxy of indium phosphide. The growth of epitaxial InP layers on (100), (111)In and (111) P oriented substrates is studied. It is shown that layers with best surface morphology

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f005ecd358a9052d3146deed5062880a
https://doi.org/10.1007/bf00896178