Zobrazeno 1 - 10
of 20
pro vyhledávání: '"B. E. Maile"'
Publikováno v:
Microelectronic Engineering. 30:35-40
The influence of proximity correction on device yield and process latitude in electron-beam fabrication of short-period metal-semiconductor-metal (MSM) photodetectors is investigated. A modified Fourier-transform deconvolution method is used for prox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::921ede2116fb1d682d5c826c68484987
https://doi.org/10.1016/0167-9317(95)00189-1
https://doi.org/10.1016/0167-9317(95)00189-1
Publikováno v:
Solid-State Electronics. 37:1001-1004
A new type of a quasi one-dimensional planar field-effect-transistor (FET) with two lateral and symmetric in-plane-gate electrodes (IPG) is realized. The vertical layer sequence consists of a GaAs/AlGaAs heterostructure and a δ-doped pseudomorphic I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::683c91ba8676be41ca5daf0594a58d21
https://doi.org/10.1016/0038-1101(94)90345-x
https://doi.org/10.1016/0038-1101(94)90345-x
Autor:
G. Weimann, H. Leier, J. Straka, B. E. Maile, Heinz Schweizer, F. E. Prins, G. Lehr, G. Mayer, Alfred Forchel
Publikováno v:
Physical Review B. 47:4060-4063
Time-resolved investigations on the photoluminescence of GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum wires as a function of the wire width and the potential well depth indicate a reduction of the en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee9ff6876d83dad9e27848e0844bf62f
https://doi.org/10.1103/physrevb.47.4060
https://doi.org/10.1103/physrevb.47.4060
Publikováno v:
physica status solidi (b). 159:457-470
The emission of compound semiconductor wires is investigated. Two types of structures are studied. Open wires defined by electron beam lithography and dry etching show a strong reduction of the quantum efficiency due to sidewall recombination if the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbbf474c52f447edde23365615c55314
https://doi.org/10.1002/pssb.2221590154
https://doi.org/10.1002/pssb.2221590154
Publikováno v:
Microelectronic Engineering. 11:43-46
We have developed quantum wires with width down to 40nm using high dose Ga - implantation (2×10 14 cm -2 ) in suitably masked GaAs/GaA1As quantum well substrates. Au masks with widths between 220nm and 40nm and a height of 40nm were defined by a two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7663b69aa32b5ab6765d1f0bd3bdf33
https://doi.org/10.1016/0167-9317(90)90070-a
https://doi.org/10.1016/0167-9317(90)90070-a
Publikováno v:
Microelectronic Engineering. 11:595-598
We have investigated the impact of dry etch sidewall damage on the optical properties of GaAs/AlGaAs quantum wires defined by high-resolution electron beam lithography. Spatially resolved cw and picosecond photoluminescence spectroscopy was used to c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::043be701a0ec73018807dff58e8a4c94
https://doi.org/10.1016/0167-9317(90)90178-v
https://doi.org/10.1016/0167-9317(90)90178-v
Publikováno v:
Applied Physics Letters. 57:807-809
Buried GaAs/AlGaAs quantum wires were prepared by Al0.2Ga0.8As overgrowth of deep etched wires defined by high‐resolution electron beam lithography and dry etching. The overgrown wires show a dramatic decrease of the optically inactive sidewall lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d76cc5a4beafd0218ff2800c383f033
https://doi.org/10.1063/1.103427
https://doi.org/10.1063/1.103427
Publikováno v:
Applied Physics Letters. 56:2016-2018
We have investigated the sidewall recombination in dry‐etched GaAs/GaAlAs wires with widths between 12 μm and 300 nm using picosecond spectroscopy. The wires were fabricated with electron beam lithography and different reactive ion etching process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a122f47d2db6f89205f7a0eb3f1d7228
https://doi.org/10.1063/1.103003
https://doi.org/10.1063/1.103003
Publikováno v:
Applied Physics Letters. 56:48-50
We have fabricated GaAs/GaAlAs quantum wires with widths between 220 and 40 nm by high‐dose (2×1014 cm−2) Ga implantation in a locally masked single quantum well structure. The width dependence of the emission energies indicates a steep 1D confi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee80b7e0417bfbc1f3ba9c1d57d8e661
https://doi.org/10.1063/1.102643
https://doi.org/10.1063/1.102643
Publikováno v:
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468b74e6df77fb7f36a71e7de640f9be
https://doi.org/10.7567/ssdm.1992.s-iii-17
https://doi.org/10.7567/ssdm.1992.s-iii-17