Zobrazeno 1 - 10
of 10
pro vyhledávání: '"B. E. E. Kastenmeier"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:25-30
The etch rate of silicon nitride (Si3N4) in the afterglow of fluorine-containing plasmas is strongly enhanced when both nitrogen and oxygen are added to the remote discharge. This effect is attributed to the formation of nitric oxide (NO), which we i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834c239a3a9c8a1274f8107d1dcf56dd
https://doi.org/10.1116/1.1329118
https://doi.org/10.1116/1.1329118
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3179-3184
A highly selective dry etching process for the removal of silicon nitride (Si3N4) layers from silicon and silicon dioxide (SiO2) is described and its mechanism examined. This new process employs a remote O2/N2 discharge with much smaller flows of CF4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79b9e2280bd38c3c9afc08ff211f7bae
https://doi.org/10.1116/1.582097
https://doi.org/10.1116/1.582097
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2431-2437
The etching of silicon in remote microwave discharges fed with NF3/O2 has been investigated. In situ ellipsometry and x-ray photoelectron spectroscopy (XPS) were used to monitor surface effects, while mass spectrometry was used to monitor the gas pha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86c58118e4e3a0ad878d286b5ccbdac7
https://doi.org/10.1116/1.581979
https://doi.org/10.1116/1.581979
Autor:
P. J. Matsuo, T. E. F. M. Standaert, Gottlieb S. Oehrlein, M. F. Doemling, N. R. Rueger, M. Schaepkens, B. E. E. Kastenmeier
Publikováno v:
IBM Journal of Research and Development. 43:181-197
Pattern transfer by plasma-based etching is one of several key processes required for fabricating silicon-based integrated circuits. We present a brief review of elementary plasma-etching processes...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2baf73d499b8a400823586e7b3d36868
https://doi.org/10.1147/rd.431.0181
https://doi.org/10.1147/rd.431.0181
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2047-2056
The etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) in the afterglow of NF3 and NF3/O2 microwave discharges has been characterized. The etch rates of both materials increase approximately linearly with the flow of NF3 due to the increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ee820679c87ea6199e48e3a789677e8
https://doi.org/10.1116/1.581309
https://doi.org/10.1116/1.581309
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1801-1813
The remote plasma chemical dry etching of polycrystalline silicon was investigated using various CF4/O2/N2 gas compositions. The effects of O2 and N2 addition on the etch rate and surface chemistry were established. Admixing O2 to CF4 increases the g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1762334656ad0f75567e8367a364ea
https://doi.org/10.1116/1.580795
https://doi.org/10.1116/1.580795
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2802-2813
The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e7993db40edf8c50d069e69a9c7dc6
https://doi.org/10.1116/1.580203
https://doi.org/10.1116/1.580203
Publikováno v:
Applied Physics Letters. 66:2634-2636
By comparing the etching characteristics of silicon and silicon nitride in CF4/O2/N2 microwave downstream plasmas we demonstrate clearly how low concentrations of energetic species can play a dominant role in remote plasma processing: Injection of 5%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ead63834718746d67da52b504a9dcd7d
https://doi.org/10.1063/1.113108
https://doi.org/10.1063/1.113108
Autor:
Sanket Sant, Matthew Goeckner, David W. Gidley, B. E. E. Kastenmeier, Lawrence J. Overzet, Huagen Peng, E. A. Joseph
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:1684
Porous methylsilsesquioxane-based spin-on films with pore sizes of 1.5–2nm and porosities ranging from 0% to 32% have been exposed to a variety of processing environments such as fluorocarbon or oxygen containing plasmas and TaN atomic layer deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28dd97684274eb3f706092028e470d6d
https://doi.org/10.1116/1.2778694
https://doi.org/10.1116/1.2778694
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:2102
Nitrogen trifluoride (NF3) is a likely candidate to replace perfluorocompounds (PFCs) in stripping and reactor cleaning applications. In this article, the performance of NF3 for the etching of silicon, silicon dioxide (SiO2), and silicon nitride (Si3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f093ab07c8e00b2d2ae748095f2175
https://doi.org/10.1116/1.1287442
https://doi.org/10.1116/1.1287442