Zobrazeno 1 - 10
of 238
pro vyhledávání: '"B. Duriez"'
Akademický článek
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Publikováno v:
Annales pharmaceutiques francaises. 79(3)
Drug packaging contributes to the harm-benefit balance of a treatment. Poorly designed packaging can lead to drug misuse with serious consequences. We report a potassium double dose medication error concerning an oral solution. It was triggered by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e798fda815a636d280439bfe13191160
https://pubmed.ncbi.nlm.nih.gov/33098873
https://pubmed.ncbi.nlm.nih.gov/33098873
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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Autor:
P. Agarwal, D. Bade, A.J. Bannister, W.J. Belden, M. Berdasco, C. Brossas, S. Cacchione, G. Castelo-Branco, A. Cicconi, D. Doenecke, M.E. Donohoe, B. Duriez, S. Erhardt, M. Esteller, A.M. Falcão, A. Fiszbein, A. Galati, M.A. Godoy Herz, L.I. Gomez Acuña, A. Göndör, A.R. Kornblihtt, A. Lennartsson, M. Lezzerini, S.J. Linder, R. Margueron, M. Martino, E. Micheli, L. Millán-Ariño, K.M. Miller, R. Mostoslavsky, A-.K. Östlund Farrants, M-.N. Prioleau, C.G. Riedel, B.A. Scholz, I. Tzelepis, A-.L. Valton, M. Wassef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf3fa16941004ee4594be678e6e4d813
https://doi.org/10.1016/b978-0-12-803395-1.00021-6
https://doi.org/10.1016/b978-0-12-803395-1.00021-6
Autor:
L. Vishnubhotla, Pierre Morin, Robert Fox, S. Boret, R. Difrenza, B. Tavel, K. Rochereau, P. Stolk, C. Detcheverry, Daniel Gloria, M.T. Basso, M. Woo, M. Broekaart, B. Duriez, P. Garnier, D. Reber, Y. Trouille, J. Bienacel, M. Denais, D. Barge, C. Ortolland, K. Cooper, Frederic Boeuf, S. Vanbergue, Vincent Huard, Jean-Damien Chapon, J. Belledent, Pascal Gouraud, Nicolas Planes, Franck Arnaud, P. Abramowitz, E. Saboure, Y. Laplanche, C. Julien, M. Bidaud, M. Marin, Romain Gwoziecki
Publikováno v:
Solid-State Electronics. 50:573-578
A complete 65 nm CMOS platform, called LP/GP Mix, has been developed employing thick oxide transistor (IO), Low Power (LP) and General Purpose (GP) devices on the same chip. Dedicated to wireless multi-media and consumer applications, this new triple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a1f438c93e06660abf827ae1f1027bf
https://doi.org/10.1016/j.sse.2006.03.030
https://doi.org/10.1016/j.sse.2006.03.030
Publikováno v:
Solid State Phenomena. :37-40
This paper investigates low temperature cleaning steps solutions (T°
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6efd7e6b57f8f6e7cad6cebfef91998e
https://doi.org/10.4028/www.scientific.net/ssp.103-104.37
https://doi.org/10.4028/www.scientific.net/ssp.103-104.37
Autor:
Frederic Boeuf, M. Muller, M. Sellier, B. Borot, F. Payet, Thomas Skotnicki, A. Pouydebasque, Emmanuel Josse, B. Duriez
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbf2e7bc3d3da66ea2adbb5cefeb6fef
https://doi.org/10.7567/ssdm.2006.h-7-4
https://doi.org/10.7567/ssdm.2006.h-7-4
Publikováno v:
AIP Conference Proceedings.
Many Computational methods are yet available for data retrieval and analysis of genomic sequences, but some functional sites are difficult to characterize. In this work, we examine the problem of promoter localization in human DNA sequences. Promoter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f14dbfa95ad3940dd7fcf6f93ee50190
https://doi.org/10.1063/1.2423280
https://doi.org/10.1063/1.2423280
Autor:
K. Rochereau, P. Stolk, S. Jullian, David Roy, Alessandro Dezzani, B. Duriez, T. Devoivre, Franck Arnaud, R. Boulestin, B. Tavel, R. Difrenza
Publikováno v:
Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005..
The 65 nm process has been optimized through thermal budget and implant of halo and LDD to reduce gate impact. It provides the best matching results ever reported to our knowledge, i.e. A/sub Vt/ of 2.1 and 1.9 mV./spl mu/m for NMOS and PMOS respecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4ea2ce61b969744cc12c459dd6042ce
https://doi.org/10.1109/icmts.2005.1452247
https://doi.org/10.1109/icmts.2005.1452247
Autor:
Stephane Monfray, Didier Dutartre, Abdelkader Souifi, D. Delille, Thomas Skotnicki, Frederic Boeuf, S. Orain, B. Duriez, F. Payet, Vincent Fiori, D. Chanemougame, Nicolas Loubet, Alexandre Talbot, Francois Leverd
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
In this paper, we present a highly-performant PMOS transistor architecture featuring a buried strained SiGe layer (stressor) underneath the Si channel and in between the epitaxially grown Si S/D regions. This stressor together with the shallow trench
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4659df8887b41c5cf533e5630d75f1
https://doi.org/10.1109/.2005.1469259
https://doi.org/10.1109/.2005.1469259