Zobrazeno 1 - 10
of 77
pro vyhledávání: '"B. Desoete"'
Publikováno v:
38th International Communications Satellite Systems Conference (ICSSC 2021).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6da945cf2f859cad88b98cf9c8a8828
https://doi.org/10.1049/icp.2022.0575
https://doi.org/10.1049/icp.2022.0575
Autor:
Ghislain Grégoire, L. Bonnet, J. De Saedeleer, F. Preud’homme, E. Van Ransbeeck, G. Creve, Petteri Nieminen, D. Moreau, Sabrina Bonnewijn, D. Pauwels, Mathias Cyamukungu, Joseph Lemaire, A. Helderweirt, K. Litefti, G. Lopez Rosson, Viviane Pierrard, Eddy Neefs, C. Quevrin, Sylvie Benck, Eino Valtonen, Stanislav Borisov, B. Desoete, J. Cabrera, M. Anciaux, Risto Punkkinen, C. Semaille, Kris Borremans, Jeroen Maes, Wojtek Hajdas, N. Brun
Publikováno v:
Space Science Reviews. 184:87-106
The Energetic Particle Telescope (EPT) is a new compact and modular ionizing particle spectrometer that was launched on 7 May 2013 to a LEO polar orbit at an altitude of 820 km onboard the ESA satellite PROBA-V. First results show electron, proton an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90e0134e6df647063f9363d663c29ba5
https://doi.org/10.1007/s11214-014-0097-8
https://doi.org/10.1007/s11214-014-0097-8
Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices
Autor:
J. Rhayem, Raul Blecic, Sergey Bychikhin, A. Wieers, Dionyz Pogany, Renaud Gillon, Marnix Tack, B. Desoete, Georg Haberfehlner, B. Besbes
Publikováno v:
Microelectronics Journal. 43:618-623
This paper presents a new methodology to characterize and simulate the electro-thermal aspects of packaged power drivers using multi- trenched XtreMOSTM devices. Electrical device data is collected by pulsed and DC measurements. Thermal data is colle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2bd6b705d9bba80457dc42512b8c2f7
https://doi.org/10.1016/j.mejo.2011.09.010
https://doi.org/10.1016/j.mejo.2011.09.010
Next generation of Deep Trench Isolation for Smart Power technologies with 120V high-voltage devices
Autor:
P. Gassot, S. Mouhoubi, B. Desoete, R. Charavel, Peter Moens, Jaume Roig, E. De Backer, Filip Bauwens, Piet Vanmeerbeek
Publikováno v:
Microelectronics Reliability. 50:1758-1762
A new Deep Trench Isolation (DTI) structure with high-voltage capability (BV > 150 V) and latch-up suppression (log(I c /I e ) < -2 in adjacent pockets) is experimentally demonstrated in this work. The new DTI is implemented in a Nepi/BLN/N - /P + Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::491cbc6537572d13b0e16a88196c9f77
https://doi.org/10.1016/j.microrel.2010.07.117
https://doi.org/10.1016/j.microrel.2010.07.117
Publikováno v:
IEEE Electron Device Letters. 29:909-912
This letter reports on anomalous bulk current effects in vertically integrated power transistors. The transistors use trench processing to make a vertical stack of gate oxide and drift oxide, the latter being used to completely deplete the drift regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b7eedb262ec265d0b813d11cd5e81a0
https://doi.org/10.1109/led.2008.2000832
https://doi.org/10.1109/led.2008.2000832
Publikováno v:
Microelectronics Reliability. 48:1479-1484
For the first time the thermal resistance ( R th ) of Multi-Trenched (MT) power devices is evaluated and compared with their Deep Trench Isolation flanked (DTI-flanked) and bulk counterparts. The R th extraction is carried out by adapted test structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c4e03687c99f82fffa46ff95599d77
https://doi.org/10.1016/j.microrel.2008.06.031
https://doi.org/10.1016/j.microrel.2008.06.031
Autor:
Joseph Rayhem, Paul Hendrickx, B. Desoete, Jan Van Houdt, Sylvie Boonen, Mike Thomason, Jan Ackaert, Jagdish Prasad, Robin Degraeve, A. Lowe, Luc Haspeslagh, T. Yao
Publikováno v:
Solid-State Electronics. 48:1911-1915
A critical problem of floating gate type nonvolatile memories (FG-NVMs) used in flash memories or EEPROMs is anomalous charge loss which leads to threshold voltage (Vt) shifts on a time scale of months or years at room temperature. The number of thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb701bd777be90ca050af13433b88e52
https://doi.org/10.1016/j.sse.2004.05.035
https://doi.org/10.1016/j.sse.2004.05.035
Autor:
Filip Bauwens, Jaume Roig, Marnix Tack, S. Mouhoubi, B. Desoete, D. Jordan, A. Rinaldi, Peter Moens
Publikováno v:
IEEE Electron Device Letters. 30:1341-1343
Trench-based power rectifiers with optimized electrical performance are presented in this letter in order to cover high-temperature applications and high-voltage capabilities ranging from 70 to 100 V. A three-step epitaxial layer substantially improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5bc6fa96ba4e39a92841254f5b05ee4
https://doi.org/10.1109/led.2009.2032572
https://doi.org/10.1109/led.2009.2032572
Publikováno v:
IEEE Electron Device Letters. 27:502-504
A novel bias-temperature-instability effect is observed in n-type integrated power transistors. The effect is enhanced by the total internal temperature of the device as well as by the oxide electric field. The total temperature that the device is ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7436a6bdc8fcb79d20c5b5aeb5bf1317
https://doi.org/10.1109/led.2006.875723
https://doi.org/10.1109/led.2006.875723
In this paper we demonstrate, for the first time, electrical results of vertical LOCOS based Insulated Base Transistors (IBT) fabricated in a 85 V BiCMOS process. Experimental results show that the devices exhibit ‘transistor like’ characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c41961b42cb3412a478da171c427fb3
http://hdl.handle.net/2086/3334
http://hdl.handle.net/2086/3334
