Zobrazeno 1 - 5
of 5
pro vyhledávání: '"B. D. Igamov"'
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 3, Iss 3, Pp 254-259 (2021)
The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by
Externí odkaz:
https://doaj.org/article/a810b115eb5e4050966d3ca1e73872e2
Publikováno v:
International Journal of Modern Physics B. 37
There arises the formation of thin films of cobalt monosilicide (CoSi) deposited into the base surface of SiO2/Si (111) using magnetron ion-plasma sputtering and subsequent thermal annealing. It was found that, in addition to the formation of CoSi si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc198644836cc77153d8e4cbf1bb03bb
https://doi.org/10.1142/s0217979223501643
https://doi.org/10.1142/s0217979223501643
Autor:
S. T. Abraeva, A. K. Tashatov, B. D. Igamov, A. S. Rysbaev, J. B. Khujaniyozov, M. T. Normuradov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:816-822
Theoretical explanation of the experimentally discovered effect of a decrease in the excitation energy of surface and volume plasma oscillations of valence Si (111) electrons during the implantation of Ba and alkaline-element ions with a large dose o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5529b2102360eda22bdbdb5b3b57486c
https://doi.org/10.1134/s102745102004031x
https://doi.org/10.1134/s102745102004031x
Autor:
T. S. Kamilov, Vera V. Klechkovskaya, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Andrey S. Orekhov
Publikováno v:
Applied Solar Energy. 55:380-384
The effect of the amorphous transition layer at the interface between Mn4Si7 and silicon doped with manganese on the photoelectric properties of heterostructures is considered. It is found that the precipitated Mn atoms on the silicon surface are gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::996ca58ae8faa2864a1acf27155dc3b3
https://doi.org/10.3103/s0003701x19060057
https://doi.org/10.3103/s0003701x19060057
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 3, Iss 3, Pp 254-259 (2019)
The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29ba3ee45be55fab49b498549c518c6d
https://doi.org/10.29317/ejpfm.2019030307
https://doi.org/10.29317/ejpfm.2019030307