Etude numérique et expérimentale sur l'utilisation des housses isolantes pour la protection thermique des produits thermo-sensibles

Autor: B. Commere, Jean Moureh, Denis Flick, Onrawee Laguerre

Publikováno v: Computers and Electronics in Agriculture
Computers and Electronics in Agriculture, Elsevier, 2002, 34 (1-3), pp.89-109. ⟨10.1016/S0168-1699(01)00181-8⟩

International audience; This work reports on the use of insulated pallet covers to provide thermal protection for heat-sensitive foodstuffs, in particular during logistic operations carried out in an uncontrolled temperature atmosphere. The effective

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3ab006231e70870f47e4d3acdb6b8bd
https://doi.org/10.1016/s0168-1699(01)00181-8

Analysis of ionizing radiation induced damage in charge coupled devices

Autor: B. Commere, L. Baratier, Y. Thenoz, F. Roy, M. Vandekerckhove

Publikováno v: RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

Ionizing environment effects on CCD test devices are studied. Like MOS technology, CCD technology exhibits active and field oxide threshold voltage shift. Resulting from this shift, transfer efficiency degradation is observed on two phase CCD registe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9dc5974ed2bc02d693044de827fbe0a7
https://doi.org/10.1109/radecs.1991.213580

New native oxide of InP with improved electrical interface properties

Autor: B. Commere, J. Joseph, G. Hollinger, Pierre Viktorovitch, E. Bergignat, Yves Robach

Publikováno v: Applied Physics Letters. 49:1281-1283

The electrical properties of InP insulator interface were improved by using a new native oxide between gate insulator and the semiconductor. This phosphorus‐rich oxide identified as In(PO3)y polyphosphate was grown anodically. Capacitance‐voltage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42c8cf51a365eb5eea62b724d7dac79d
https://doi.org/10.1063/1.97386

On the chemistry of passivated oxide–InP interfaces

Autor: J. Joseph, G. Hollinger, Y. Robach, Pierre Viktorovitch, M. Froment, E. Bergignat, B. Commere

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5:1108

Passivating native oxide films (≊150 A) have been prepared by anodic oxidation of InP. X‐ray photoelectron spectroscopy (XPS) chemical depth profiles reveal a double layer structure with indium‐rich oxides at the surface and phosphorous‐rich

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c51afa786de9928358aeb1c143baccd2
https://doi.org/10.1116/1.583737

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