Zobrazeno 1 - 10
of 130
pro vyhledávání: '"B. Chenevier"'
Autor:
Olivier Marty, C. Merckling, Yves Robach, B. Chenevier, Sebastien Gaillard, Guillaume Saint-Girons, G. Delhaye, Y. Rozier, M. El-Kazzi, Michel Gendry, L. Rapenne, G. Hollinger
Publikováno v:
Microelectronics Reliability. 47:540-543
In this work, the potentiality of molecular beam epitaxy techniques to prepare epitaxial lanthanum aluminate (LaAlO 3 ) films on Si(0 0 1) is explored. We first demonstrate that the direct growth of LaAlO 3 on Si(0 0 1) is impossible : amorphous laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3224e4757567da300e8d3eee18f19f59
https://doi.org/10.1016/j.microrel.2007.01.036
https://doi.org/10.1016/j.microrel.2007.01.036
Publikováno v:
Microelectronic Engineering. 83:2437-2440
This paper investigates the time and temperature dependence of amorphous silicon lateral crystallization when polycrystalline germanium is used as a seed. Dramatically different crystallization behaviour is observed for heavy and light crystallizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619aa1cfd818b0b3be14df5fb9f9ee8f
https://doi.org/10.1016/j.mee.2006.10.032
https://doi.org/10.1016/j.mee.2006.10.032
Publikováno v:
Microelectronic Engineering. 70:436-441
Using X-ray diffraction experiments and curvature measurements, in-situ real-time measurements of stress are performed during solid state reaction of a palladium thin film with Si(001). From X-ray diffraction measurements and using the sin2ψ method,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51e15e127bb30929ae1b8235d4748afd
https://doi.org/10.1016/s0167-9317(03)00427-1
https://doi.org/10.1016/s0167-9317(03)00427-1
Autor:
L. Kubler, Roland Madar, Marc Audier, I. Matko, L. Simon, B. Chenevier, Dominique Aubel, M. Diani
Publikováno v:
Journal of Crystal Growth. 235:95-102
3C–SiC epitaxial crystal growth was carried out by repeated cycles of Si MBE deposition at room temperature followed by a carbonization under C 2 H 4 and annealing at 900°C. This was done on a 3×3 reconstructed, well oriented, Si terminated 6H–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::832108c45876438af20d16857ddfad92
https://doi.org/10.1016/s0022-0248(01)01819-x
https://doi.org/10.1016/s0022-0248(01)01819-x
Publikováno v:
Journal of Applied Physics. 86:2300-2306
In semiconductor technology, TiN thin film elements can be used as diffusion barrier between a metallic layer and a silicon oxide dielectric. Plasma application during the growth of TiN thin films modifies the microstructure of these films and conseq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13cb6e26977e7b620bc1d756b69dc0df
https://doi.org/10.1063/1.371045
https://doi.org/10.1063/1.371045
Publikováno v:
Microelectronic Engineering. 83:2033-2035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2551031806820eb4f710ead952b0ed37
https://doi.org/10.1016/j.mee.2006.09.004
https://doi.org/10.1016/j.mee.2006.09.004
Autor:
Alica Rosová, Johan Snauwaert, B. Chenevier, A. Figueras, Karol Fröhlich, D. Machajdík, François Weiss, J Šouc
Publikováno v:
Acta Physica Polonica A. 92:255-258
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31ac134135cf080cdaf33a49274c65cd
https://doi.org/10.12693/aphyspola.92.255
https://doi.org/10.12693/aphyspola.92.255
Publikováno v:
Journal of Physics and Chemistry of Solids. 57:527-537
A polarized Raman study of tetragonal monocrystalline WSi 2 is reported. The two Raman lines of WSi 2 have been assigned in terms of symmetry. Using a linear chain model, force constants of 6.64 and 3.16 N/cm for compressive Si-Si and Si-W motions al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1b9f4a52f1c02eb8df94d69025f9234
https://doi.org/10.1016/0022-3697(95)00305-3
https://doi.org/10.1016/0022-3697(95)00305-3
Publikováno v:
Journal of Physics: Condensed Matter. 6:8725-8732
The PrGe1.6 compound shows two coexistent crystallographic structures, which are ordered and disordered variants of the ThSi2 structure, the ordered phase resulting from the ordering of Ge vacancies. Comparison is made with CeGe1.6 and Ce and Pr sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63ce1cbb174b37ba5359135703e2f82
https://doi.org/10.1088/0953-8984/6/42/005
https://doi.org/10.1088/0953-8984/6/42/005
Autor:
B. Chenevier, J. Hudner, François Weiss, Olivier P. Thomas, D. Boursier, Jean-Pierre Senateur, M. Östling, Eric Mossang
Publikováno v:
Journal of Alloys and Compounds. 195:287-290
Epitaxial thin layers of YBa 2 Cu 3 O 7−x are synthesised by thermal decomposition (750 – 830 °C) of tetramethylheptanedionates of yttrium, barium and copper in the presence of oxygen. Argon is used as a carrier gas and the partial pressures of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eae7069ab01321b2128b91130c1f9d9
https://doi.org/10.1016/0925-8388(93)90741-5
https://doi.org/10.1016/0925-8388(93)90741-5