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Publikováno v:
Journal of Electronic Materials. 34:944-948
We have determined the optical properties of a series of Cl-doped ZnSe epilayers grown on GaAs substrates using ellipsometry and prism coupling. Initially, the carrier concentrations were determined using Hall measurements for samples between 6.30×1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad05ffe11cc968f6c27dea60ca6b3a3e
https://doi.org/10.1007/s11664-005-0047-z
https://doi.org/10.1007/s11664-005-0047-z
