Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

Autor: T. N. Wistisen, U. I. Uggerhøj, U. Wienands, T. W. Markiewicz, R. J. Noble, B. C. Benson, T. Smith, E. Bagli, L. Bandiera, G. Germogli, V. Guidi, A. Mazzolari, R. Holtzapple, S. Tucker

Publikováno v: Physical Review Accelerators and Beams, Vol 19, Iss 7, p 071001 (2016)

We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silico

Externí odkaz: https://doaj.org/article/0cd896e6deea49f4abdce4f076bfe331

Photon emission by volume reflected electrons in bent crystals

Autor: Ulrik I. Uggerhøj, Laura Bandiera, Vincenzo Guidi, R. Holtzapple, T. W. Markiewicz, B. . c. Benson, C. F. Nielsen, Andrea Mazzolari, U. Wienands, Enrico Bagli

Publikováno v: Nielsen, C F, Uggerhøj, U I, Holtzapple, R, Markiewicz, T W, Benson, B C, Bagli, E, Bandiera, L, Guidi, V, Mazzolari, A & Wienands, U 2019, ' Photon emission by volume reflected electrons in bent crystals ', Physical Review Accelerators and Beams, vol. 22, no. 11, 114701 . https://doi.org/10.1103/PhysRevAccelBeams.22.114701
Physical Review Accelerators and Beams, Vol 22, Iss 11, p 114701 (2019)

We present a quantitative experimental analysis of the radiation emission of 12.6 GeV electrons moving along and across the (111) planes of a strongly bent silicon crystal with a bending radius of 0.15 m. We have measured the radiation emitted during

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2839b8e26b65a11417fc1f0509ac908
https://doi.org/10.1103/physrevaccelbeams.22.114701

Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

Autor: Laura Bandiera, T. N. Wistisen, Vincenzo Guidi, G. Germogli, S. Tucker, R. J. Noble, Andrea Mazzolari, Enrico Bagli, U. Wienands, B. . c. Benson, T. Smith, T. W. Markiewicz, R. Holtzapple, Ulrik I. Uggerhøj

Publikováno v: Wistisen, T N, Uggerhoj, U I, Wienands, U, Markiewicz, T W, Noble, R J, Benson, B C, Smith, T, Bagli, E, Bandiera, L, Germogli, G, Guidi, V, Mazzolari, A, Holtzapple, R & Tucker, S 2016, ' Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal ', Physical review accelerators and beams, vol. 19, no. 7, 071001 . https://doi.org/10.1103/PhysRevAccelBeams.19.071001
Physical Review Accelerators and Beams, Vol 19, Iss 7, p 071001 (2016)

We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silico

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cda69ebda2ee5f14cdb22b211fca565e
https://doi.org/10.1103/physrevaccelbeams.19.071001

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