Zobrazeno 1 - 10
of 105
pro vyhledávání: '"B. Bullemer"'
Autor:
H Pfleiderer, B Bullemer
Publikováno v:
Solar Energy Materials and Solar Cells. 53:131-152
The field in the i-layer of an amorphous-silicon solar cell may be assumed as uniform. We formulate the respective cell model without further approximations in terms of a “regional method”. The i-layer is subdivided for that purpose in many regio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e44f3932a72ecddced727dee8c001b
https://doi.org/10.1016/s0927-0248(98)00019-1
https://doi.org/10.1016/s0927-0248(98)00019-1
Publikováno v:
Surface Review and Letters. :21-25
Large unit cells of dimer-adatom-stacking-fault structure and related 2 × 2 and c(4 × 2) reconstructions have been prepared by low-temperature solid-phase epitaxy and observed by scanning tunneling microscopy. The size-different unit cells of the D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33654dda181ffd227ba85f3cd87d1c1f
https://doi.org/10.1142/s0218625x98000074
https://doi.org/10.1142/s0218625x98000074
Publikováno v:
Surface Science. 382:L658-L665
The atomic structure of SiC(0001)C surface of the 6H polytype has been studied in UHV by scanning tunnelling microscopy, low energy electron diffraction and Auger electron spectroscopy. A number of different reconstructions could be reproducibly prep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9475bfad9f64b465bf9701eef3945df
https://doi.org/10.1016/s0039-6028(97)00084-8
https://doi.org/10.1016/s0039-6028(97)00084-8
Publikováno v:
Surface Science. 375:195-202
Large unit cells of dimer-adatom-stacking-fault (DAS) structure and related (2 × 2) and c(4 × 2) reconstructions have been prepared by low temperature solid phase epitaxy and observed by scanning tunnelling microscopy. The development of larger uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c870a94f56bbfd142e0d1ac13d642007
https://doi.org/10.1016/s0039-6028(96)01291-5
https://doi.org/10.1016/s0039-6028(96)01291-5
Publikováno v:
Surface Science. 376:L414-L418
A simple method of cooling rate determination of Si samples in a radiative quench is presented. The method relies on monitoring of the LEED pattern of the Si(111) sample during quench and exact determination of the onset of the 1 × 1 – 7 × 7 phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c88e59d42186ac67d03ff0f523622ef
https://doi.org/10.1016/s0039-6028(96)01589-0
https://doi.org/10.1016/s0039-6028(96)01589-0
Publikováno v:
Thin Solid Films. 294:88-92
Solid-phase epitaxy has been performed on Si(100) and Si(111) surfaces at substrate temperatures in the range of 350–650 °C and for film thickness up to a few monolayers. The features of the epitaxial films were acquired by scanning tunnelling mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::617a1f6ed87a202083c099bffb13bccc
https://doi.org/10.1016/s0040-6090(96)09253-x
https://doi.org/10.1016/s0040-6090(96)09253-x
Publikováno v:
Applied Surface Science. 103:443-449
Scanning tunnelling microscopy is used to study the structure of the B Si(100) surface at low boron coverage, the surface being prepared by high-temperature annealing of heavily B-doped Si(100) samples. The surface reproducibly shows features which a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67eb89d73b495756c792bb3a05bc8e10
https://doi.org/10.1016/s0169-4332(96)00542-9
https://doi.org/10.1016/s0169-4332(96)00542-9
Publikováno v:
Surface Science. 369:L131-L135
New features of the C-type defects on the Si(100) surface have been found by a scanning tunnelling microscope. The depressions of these defects appear to be surface vacancies. Two protrusions of most C-type defects are actually not equal and the smal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b0a6a8f69cd5889ebf143f39798844b
https://doi.org/10.1016/s0039-6028(96)01129-6
https://doi.org/10.1016/s0039-6028(96)01129-6
Publikováno v:
Surface Science. 369:69-75
c(4 × 4) reconstructions have been prepared by 600°C annealing a number of different Si(100) surfaces upon which about one monolayer thick Si films had been deposited at several temperatures. Nucleation, extension and disappearance of these structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bade63f2ee4d2b5fba484f42793bf1e6
https://doi.org/10.1016/s0039-6028(96)00925-9
https://doi.org/10.1016/s0039-6028(96)00925-9
Publikováno v:
Surface Science. :358-363
Si(111)√3 × √3-B surface phase has been formed by high-temperature annealing of B-doped Si samples. Low-energy electron diffraction observations have revealed that the Si(111)√3 × √3-B surface phase is very stable with respect to heating an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e1516c08ba6837c9b4355d39bb222a
https://doi.org/10.1016/0039-6028(95)01160-9
https://doi.org/10.1016/0039-6028(95)01160-9