Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

Autor: R. Strenaer, Y. Guhel, C. Gaquiere, B. Boudart

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2022, 69 (11), pp.6010-6015. ⟨10.1109/TED.2022.3209636⟩

International audience; The aim of this article is to detect electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurement with photoionization techniques to rapidly assess their activation energies

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98f7fadf03091b708b1480ff1206b416
https://doi.org/10.1109/ted.2022.3209636

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‘Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties’

Autor: J. El Fallah, J.C. Pesant, R. Coq Germanicus, Y. Guhel, Philippe Descamps, Jérôme Bernard, A. Besq, B. Boudart, T. Toloshniak

Publikováno v: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, Elsevier, 2015
Materials Science in Semiconductor Processing, 2015, 30, pp.352-360. ⟨10.1016/j.mssp.2014.10.010⟩
Materials Science in Semiconductor Processing, Elsevier, 2015, 30, pp.352-360. ⟨10.1016/j.mssp.2014.10.010⟩

International audience; The impact of the heating rate (HR) of a Rapid Thermal Annealing (RTA) on the crystallinity and on the morphology of CeO2 thin films has been investigated by Raman Spectroscopy (RS), Photoluminescence (PL), Scanning Electron M

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f37bdeeff868581cbbbd23c14a830440
https://hal.archives-ouvertes.fr/hal-02936078

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Load impedance influence on the I/sub D/(Y/sub DS/) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz

Autor: J.C. De Jaeger, Y. Guhel, M.A. Poisson, Nicolas Vellas, B. Boudart, F. Bue, C. Gaquiere

Publikováno v: IEEE Electron Device Letters. 23:246-248

A measurement system allowing one to put in evidence the trap effects on the power performance of Al/sub 0.1/Ga/sub 0.9/N/GaN high electron mobility transistors (HEMTs) made on sapphire substrate is presented in this paper. This setup permits simulta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a2a24b4a48ff7b7cad3489042217313
https://doi.org/10.1109/55.998865