Zobrazeno 1 - 10
of 49
pro vyhledávání: '"B. Birkmann"'
Publikováno v:
Journal of Crystal Growth. 312:1397-1401
An overview of simulation models in use for optimizing the edge-defined film-fed growth (EFG) process of thin-walled hollow silicon tubes at WACKER SCHOTT Solar is presented. The simulations span the length scales from complete furnace models over gr
Publikováno v:
Journal of Crystal Growth. 310:2209-2214
Ga transport in the melt during EFG Si crystal growth has been simulated within a 3D unsteady approach. The computations reveal reasons of effective redistribution of the impurity in the crystallization system. The computational results are compared
Autor:
Georg Müller, S. Hussy, B. Birkmann, Elke Meissner, Patrick Berwian, G. Sun, Jochen Friedrich
Publikováno v:
Journal of Crystal Growth. 297:133-137
GaN crystals grown from solution and vapor phase show pronounced facetting. In order to explain the occurrence of the facets, Jackson's α -factor is determined for the III-nitrides under various growth conditions. Jackson's theory confirms that for
Publikováno v:
Journal of Crystal Growth. 292:201-205
Gallium nitride (GaN) crystals were synthesized by the reaction between gallium-containing solutions and flowing ammonia at temperatures between 900 and 1050 °C under atmospheric pressure. The crystals were colorless or amber with a size up to 1 mm.
Autor:
B. Birkmann, Georg Müller, Elke Meissner, Horst P. Strunk, S. Hussy, Jürgen Off, I. Brauer, F. Scholz
Publikováno v:
physica status solidi (a). 203:1676-1680
In this paper a-plane GaN-layers, grown by two different techniques are compared, mainly focusing on the surface morphology and microstructure of the samples: Layers grown by metal organic vapor phase epitaxy (MOVPE) exhibit a flat surface interrupte
Publikováno v:
physica status solidi c. 3:575-578
By using reflectivity and temperature resolved Hall measurements the electrical properties of low pressure solution grown (LPSG) GaN are determined. Hall measurements show that the material is degenerate. The reflectivity spectra are governed by the
Publikováno v:
physica status solidi (a). 202:2870-2879
Bulk GaAs and InP crystals with diameter of 4″ or more can now be grown with very low dislocation densities (EPD considerably below 1000 cm–2) using the Vertical Gradient Freeze (VGF) growth technique and rigorous process optimization by the aid
Publikováno v:
physica status solidi (c). 2:2040-2043
GaN crystals were synthesised in a horizontal reactor system using ammonia as a nitrogen source. In the first part of this project a parameter study was performed to evaluate a suitable growth window, concerning e.g. process temperature, gas flows or
Publikováno v:
The European Physical Journal Applied Physics. 27:357-361
We present an optical technique based on absorption measurements for the determination of the charge carrier concentration and its lateral distribution in n-type doped GaAs wafers. Calibration plots were determined in the charge carrier concentration
Publikováno v:
Journal of Crystal Growth. :345-349
The incorporation of silicon into VGF-grown GaAs is examined by Hall effect measurements, spark source mass spectrometry and photoluminescence (PL). It is found that the silicon is incorporated into the crystal according to Scheils-law with the Si co