Zobrazeno 1 - 10
of 49
pro vyhledávání: '"B. Biasse"'
Autor:
B. Ghyselen, Emmanuel Nolot, Laurent Clavelier, O. Faynot, B. Biasse, T. Signamarcheix, Francois Andrieu, M. Casse, A.M. Papon
Publikováno v:
Solid-State Electronics
An alternative technology is studied here to elaborate hybrid orientation silicon on insulator (SOI) films above a continuous buried oxide (BOX). To this purpose, a “deep-amorphization” followed by solid phase epitaxial regrowth (SPER) of SOI fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10c1a895fcd747cb4417c0ccff3d2418
https://doi.org/10.1016/j.sse.2011.01.013
https://doi.org/10.1016/j.sse.2011.01.013
Autor:
Youcef Ouerdane, Florent Pigeon, Gregory Pandraud, B. Biasse, Alain Mure-Ravaud, Aziz Boukenter, Serge Pelissier
Publikováno v:
Journal of Non-Crystalline Solids. 216:95-98
We report results of an original photoinduced luminescence spectroscopy application to determine the process of direct bonding of silica wafers. This application is based upon laser induced visible fluorescence of the defects created during the bondi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4edce1f79e163cd5754d5d0cc1ee566
https://doi.org/10.1016/s0022-3093(97)00208-1
https://doi.org/10.1016/s0022-3093(97)00208-1
Autor:
J.M. Hartmann, F. Allain, Mikael Casse, D. Lafond, B. Guillaumot, Maud Vinet, Bernard Previtali, Julie Widiez, C. Vizioz, B. Biasse, J. Chiaroni, Y. Le Tiec, Simon Deleonibus, Yves Morand, Thierry Poiroux, J. Lolivier, P. Besson
Publikováno v:
IEEE Electron Device Letters. 26:317-319
Thanks to bonding, metal-gate etching without any out-of-gate Si consumption, and self-aligned transfer of alignment marks, we have processed the first 10-nm-gate-length DG MOS transistors with metal gates. These devices exhibit excellent short-chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd99797c6ed0ab8068b83a30216a73e
https://doi.org/10.1109/led.2005.846580
https://doi.org/10.1109/led.2005.846580
Autor:
D. Lafond, A. Roman, V. Carron, Bernard Previtali, François Martin, J.M. Hartmann, P. Besson, Yves Morand, P. Holliger, Mireille Mouis, B. Guillaumot, J. Lolivier, C. Vizioz, T. Poiroux, M. Casse, R. Truche, A. Toffoli, J. Simon, D. Renaud, F. Allain, M. Vinet, Julie Widiez, Simon Deleonibus, S. Maitrejean, B. Biasse, F. Laugier
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7476b7f58224a46ee07bf62023e212f8
https://doi.org/10.7567/ssdm.2004.b-10-3
https://doi.org/10.7567/ssdm.2004.b-10-3
Autor:
B. Ghyselen, Gérard Benassayag, Fabrice Letertre, A. M. Papon, A. Soubie, H. Moriceau, Alain Claverie, C. Lagahe, B. Aspar, T. Barge, B. Biasse, A. Chabli, E. Jalaguier, Jérémie Grisolia
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
The Smart-Cut(R) process, based on proton implantation and wafer bonding, appears more and more as a generic process. The first part of the paper is dedicated to the specific case of thermally induced splitting. Cavity growth by Ostwald ripening mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2873b1d73bf3a41f2317ad39edcc3966
https://doi.org/10.1109/iit.2000.924138
https://doi.org/10.1109/iit.2000.924138
Autor:
B. Biasse, A.M. Cartier, A.M. Papon, F. Gusella, J.F. Michaud, J. Margail, C. Jaussaud, C. Pudda, J.M. Lamure, A. Soubie
Publikováno v:
1990 IEEE SOS/SOI Technology Conference. Proceedings.
A 150 m/sup 2/ class 100 clean room, specially dedicated for separation by implantation of oxygen (SIMOX) wafer production on a semi-industrial basis, has been set up at LETI. This facility includes a very high current oxygen ion implantation machine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da7dc4320d9e96dfc8b5f58b7d46adb8
https://doi.org/10.1109/sossoi.1990.145702
https://doi.org/10.1109/sossoi.1990.145702
Autor:
B. Biasse, J.-L. Stehle
Publikováno v:
1990 IEEE SOS/SOI Technology Conference. Proceedings.
A nondestructive optical technique, spectroscopic ellipsometry (SE), used to control top SiO/sub 2/, silicon, and buried SiO/sub 2/ layer thicknesses, as well as interfaces of these layers during SIMOX (separation by implantation of oxygen) wafer fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e422a6e0640c67de410a15651654eae
https://doi.org/10.1109/sossoi.1990.145757
https://doi.org/10.1109/sossoi.1990.145757
Autor:
T. Signamarcheix, Laurent Clavelier, A.-M. Papon, O. Faynot, B. Biasse, Bruno Ghyselen, Emmanuel Nolot, Jérôme Leveneur, Frédéric Mazen
Publikováno v:
Applied Physics Letters. 96:262111
A bilayer silicon-on-insulator film was engineered to locally convert the crystallographic orientation from (100) to (110). The initial bilayer film is composed of a first 50 nm thick (110) oriented Si surface layer, above a second 20 nm thick (100)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::911dc8ba8c3d4e01fee588d637884140
https://doi.org/10.1063/1.3459966
https://doi.org/10.1063/1.3459966
Publikováno v:
Electronics Letters. 31:792-793
The authors focus on the low-temperature direct bonding of Pyrex glass wafers. A hydrophilic treatment has been used to decrease the process temperature. After a final heat treatment at 350°C, a tensile strength of ~250 kgf/cm2 has been measured.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7500752f01449df15fef339f3574019
https://doi.org/10.1049/el:19950554
https://doi.org/10.1049/el:19950554
Publikováno v:
Le Journal de Physique Colloques. 44:C5-303
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8eb96f72474605b4eb58d65116fce0c
https://doi.org/10.1051/jphyscol:1983545
https://doi.org/10.1051/jphyscol:1983545