Zobrazeno 1 - 10
of 65
pro vyhledávání: '"B. Berghoff"'
Autor:
Joachim Knoch, Merlin Müller, Federica Bondino, Igor Píš, Dirk König, Sara Gonzalez, Noël Wilck, Michael Frentzen, Sean C. Smith, Giovanni Di Santo, Silvia Nappini, Joachim Mayer, Luca Petaccia, B. Berghoff
Publikováno v:
ACS Applied Materials & Interfaces. 13:20479-20488
Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mo
Autor:
Dierk Raabe, Oana Cojocaru-Mirédin, Purvesh Soni, Joachim Knoch, Roland Wuerz, B. Berghoff, Mohit Raghuwanshi
Publikováno v:
Solar Energy Materials and Solar Cells. 195:367-375
In the present work, sputtered In2S3 buffer layers are deposited on Cu(In,Ga)Se2 absorbers with no or minimal sputter damage. Buffer deposition at slower sputter rates (0.22 A/s) with H2S as a reactive gas improved the interface quality and uniformit
Publikováno v:
Solar Energy Materials and Solar Cells. 191:422-426
We present a record-high solar-to-hydrogen conversion efficiency (STH) for monolithic all-silicon multi-junction solar devices. The device is based on an interdigitated back-contact silicon solar cell, in which the p- and n-regions are connected in a
Autor:
Dierk Raabe, Roland Wuerz, Oana Cojocaru-Mirédin, Joachim Knoch, Purvesh Soni, B. Berghoff, Mohit Raghuwanshi
Publikováno v:
Energy Science & Engineering
Autor:
Sangeeta Thakur, Luca Petaccia, Giovanni Di Santo, Daniel Hiller, Noël Wilck, Merlin Müller, Sean C. Smith, B. Berghoff, Dirk König, Joachim Mayer, Joachim Knoch
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2255-2264 (2018)
Beilstein Journal of Nanotechnology
Beilstein journal of nanotechnology 9, 2255-2264 (2018). doi:10.3762/bjnano.9.210
Beilstein Journal of Nanotechnology
Beilstein journal of nanotechnology 9, 2255-2264 (2018). doi:10.3762/bjnano.9.210
Beilstein journal of nanotechnology 9, 2255-2264 (2018). doi:10.3762/bjnano.9.210
Published by Beilstein-Institut zur Förderung der Chemischen Wissenschaften, Frankfurt, M.
Published by Beilstein-Institut zur Förderung der Chemischen Wissenschaften, Frankfurt, M.
Autor:
Noël Wilck, Sean C. Smith, Giovanni Di Santo, Dirk König, Luca Petaccia, Joachim Mayer, Joachim Knoch, Alexander Meledin, B. Berghoff, Daniel Hiller
Publikováno v:
Physical Review Applied. 12
In semiconductor physics for electronics, conventional impurity doping presents a major obstacle to further miniaturization for ultralarge-scale integration. The authors discuss a phenomenon occurring at deep nanoscale Si volumes with a large surface
Autor:
Maarten Debucquoy, Noël Wilck, Barry O'Sullivan, Joachim Knoch, S. Starschich, S. Nordmann, Joachim John, B. Berghoff, A. Hessel
Publikováno v:
Renewable Energy. 94:90-95
We present a silicon-based, monolithic multi-junction solar device that is suitable for the sustainable and reliable production of hydrogen. It is based on an interdigitated back-contact (IBC) solar cell which is modified, so that the p- and n-region
Autor:
B. Berghoff, Joachim Knoch, Thomas Taubner, Sergej Fischer, Tobias W. W. Maß, Hauke Ingolf Kremer
Publikováno v:
physica status solidi (a). 213:1494-1499
authoren We present a dopant-free CMOS technology where n- and p-type semiconductor contacts are realized exclusively based on ultrathin silicon nitrides and metals with appropriate work function. Ellipsometry and FTIR measurements are applied to cha
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