Výsledky vyhledávání - "B. Berenguier"

Study by numerical simulation of a PN solar cell in 3C-SiC / Si

Autor: Laurent Ottaviani, B. Berenguier, M. Toure, Diouma Kobor, Marcel Pasquinelli

Publikováno v: African Journal of Environmental Science and Technology. 12:532-537

The optimization of the solar cell includes the study of the influence of parameters such as cell thickness, doping levels and profiles, contact configuration and optical confinement on the output to obtain a structure leading to the best performance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::157e5fbfe117e510785454aabd8b0963
https://doi.org/10.5897/ajest2018.2565

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

SiC UV Detectors under Heavy Ions Irradiation

Autor: Evgenia V. Kalinina, Laurent Ottaviani, Alexandr Lebedev, Vladimir A. Skuratov, B. Berenguier

Publikováno v: Materials Science Forum. :867-870

4H-SiC ultraviolet photodetectors based on Schottky barriers have been formed on lightly doped n-type epitaxial layers grown by chemical vapor deposition method on industrial substrates. The diode structures were irradiated at 25°C with 167 MeV Xe i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99d994472437f2007b26fdeee87744be
https://doi.org/10.4028/www.scientific.net/msf.821-823.867

Zobrazit plný text záznamu

4H-SiC P+N UV Photodiodes for Space Applications

Autor: Laurent Ottaviani, B. Berenguier, Evgenia V. Kalinina, Frank Torregrosa, Frederic Milesi, Olivier Palais, Stéphane Biondo, A. Lyoussi, Mihai Lazar, A. A. Lebedev

Publikováno v: Materials Science Forum. :644-647

Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::28066c8f5035e8cd26de6535f6936248
https://doi.org/10.4028/www.scientific.net/msf.821-823.644

Zobrazit plný text záznamu

Recombination processes in 4H-SiC pn structures

Autor: Eugene B. Yakimov, B. Berenguier, Anatoly M. Strel'chuk, Laurent Ottaviani

Publikováno v: Materials Science Forum
Materials Science Forum, 2016, 858, pp.345-348
Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.345-348

Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::058765fac97d8316cfe0a99d95640a99
https://hal-amu.archives-ouvertes.fr/hal-01452646

Zobrazit plný text záznamu

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Autor: A. Lyoussi, Olivier Palais, B. Berenguier, Sylvain Bertaina, Laurent Ottaviani

Publikováno v: Materials Science Forum
Materials Science Forum, 2016, 858, pp.337-340. ⟨10.4028/www.scientific.net/MSF.858.337⟩
Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.337-340. ⟨10.4028/www.scientific.net/MSF.858.337⟩

International audience; During the past years, our team developed an original lifetime measurement method for semiconductors wafers, called microwave phase-shift (µW-PS). It was successfully employed to determinate bulk lifetime and surface recombin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43569664bbdf0ab3acaf943bf4e0d977
https://hal-amu.archives-ouvertes.fr/hal-03350123

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

8% efficient CuInS2 solar cells by electrochemically removed Cu–S Phases

Autor: Mohammed Aggour, B. Berenguier, M. Kanis, C. Kelch, M. Winkelnkemper, Hans-Joachim Lewerenz, K. Skorupska, J. Klaer, T. Wilhelm

Publikováno v: Thin Solid Films. :24-28

Investigations on how to replace the toxic KCN etching for the removal of Cu-S phases during the preparation of CuInS 2 (CIS) absorber layers by electrochemical procedures are presented. Starting from a simple anodic treatment in V 2+ /V 3+ electroly

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::482cbb62cb6d4d9caf648c51272b0b0d
https://doi.org/10.1016/j.tsf.2004.11.030

Zobrazit plný text záznamu

4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation

Autor: M. Lazar, F. Torregrosa, E.V. Kalinina, Frederic Milesi, B. Berenguier, Alexander A. Lebedev, Laurent Ottaviani, Wilfried Vervisch, Stephane Biondo, Olivier Palais, Abdallah Lyoussi

Publikováno v: MRS Online Proceedings Library Archive
MRS Online Proceedings Library Archive, Cambridge University Press, 2014, 1693, ⟨10.1557/opl.2014.565⟩
MRS Online Proceedings Library
MRS Online Proceedings Library, 2014, 1693, ⟨10.1557/opl.2014.565⟩

4H-SiC p+n photodiodes based on ultrathin-junctions have been fabricated with distinct processes for the p+-region creation: either with Aluminium conventional ion implantation, or with Boron Plasma Ion Immersion Implantation. Spectral sensitivity me

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1daff554df3f16d0ed71bfc37be16053
https://hal-amu.archives-ouvertes.fr/hal-03350144

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání