Zobrazeno 1 - 10
of 180
pro vyhledávání: '"B. Balland"'
Publikováno v:
Journal of Non-Crystalline Solids. 322:240-245
One of the main reliability problem in electrically erasable programmable read only memory (EEPROM) devices is the progressive closure of the programming window as the number of applied write/erase cycles is increased. This closure is qualitatively a
Publikováno v:
Le Journal de Physique IV. 11:Pr11-199
In this work we have studied the effect of TaSi 2 and WSi 2 silicide deposition on the electrical properties of non-degraded dry-wet-dry oxides (-7.2 nm) in polycide/SiO 2 /Si structures. WSi 2 and TaSi 2 silicides are deposited by chemical vapor dep
Publikováno v:
Journal of Materials Science: Materials in Electronics. 12:333-338
In this work we have studied the influence of N2O nitridation of thin EEPROM SiO2 tunnel oxides on Fowler–Nordheim tunnel injection potential barrier heights in WSi2-polysilicon gate MOS structures. In particular we have paid attention to the effec
Publikováno v:
Surface and Interface Analysis. 30:387-390
In microelectronics, during fabrication of ultrashallow p-n junctions boron is implanted in a silicon monocrystal. However, the subsequent rapid thermal annealing (RTA) causes anomalous fast diffusion (transient enhanced diffusion, TED) of the boron
Autor:
B. Balland, Jimmie J. Wortman, Pascal Masson, Jean-Luc Autran, Eric M. Vogel, J Brini, P. Morfouli
Publikováno v:
Journal of Non-Crystalline Solids. 245:54-58
Slow traps and interface traps density has been measured using low frequency (10 Hz) noise and charge pumping measurements. The study has been carried out on n-channel metal-oxide-semiconductor transistors with ultra thin gate dielectrics prepared by
Publikováno v:
Journal of Non-Crystalline Solids. 245:85-91
An experimental set-up was implemented by which metal-oxide-semiconductor (MOS) capacitors are subjected to bipolar high voltage (up to 20 V) pulses similar to those used in programming electrically erasable programmable read-only memory (EEPROM) dev
Autor:
Z. Sassi, Christian Gontrand, L. Kaabi, B. Remaki, J.C. Bureau, J. Ben Brahim, B. Balland, H. El Omari
Publikováno v:
The European Physical Journal Applied Physics. 3:49-52
The present study deals with the investigation of electrically active damage induced by direct and through protecting oxide layer implantation of 11 B + ions. The residual defects have been determined by means of Deep Level Transient Spectroscopy (DL
Publikováno v:
Materials Science and Engineering: R: Reports. 22:269-322
This paper reviews the present knowledge on tantalum pentoxide (Ta 2 O 5 ) thin films and their applications in the field of microelectronics and integrated microtechnologies. Different methods used to produce tantalum oxide layers are described, emp
Publikováno v:
Annales de Chimie Science des Mat�riaux. 23:359-364
Summary The proposed work deals with rapid thermal processing of ionic boron, implanted in phosphorus-doped Cz-(100) silicon substrates through protecting oxide films, with different technological parameters. After implantation, the samples were rapi
Publikováno v:
Synthetic Metals. 90:217-221
The proposed work deals with rapid thermal processing of ionic boron (11B+) and boron difluoride (BF2+), implanted in phosphorusdoped Cz-(100) silicon substrates through protecting oxide films, under different technological parameters. After implanta