Zobrazeno 1 - 10
of 12
pro vyhledávání: '"B. B. Elenkrig"'
Publikováno v:
Journal of Applied Physics. 87:1-4
The series resistance of InGaAsP/InP multiple quantum well ridge waveguide laser diodes is investigated experimentally over a wide temperature range for both Fabry–Perot and distributed feedback type lasers. From the temperature dependence of the s
Autor:
N. A. Gun’ko, Anatoli Polkovnikov, John G. Simmons, B. B. Elenkrig, Levon V. Asryan, T. Makino, Robert A. Suris, Georgy G. Zegrya, Pey-Kee Lau, S. Smetona
Publikováno v:
Semiconductor Science and Technology. 14:1069-1075
An analytical model of the effect of heating on the high-power and high-temperature operation of semiconductor multiple quantum well lasers (MQWLs) is developed. Both the lattice heating and the carrier heating in the active region are shown to play
Publikováno v:
Journal of Applied Physics. 85:2367-2370
The maximum operating optical powers of ridge-waveguide 1.3 μm strained layer multiple quantum well lasers with various barrier heights and cavity lengths have been investigated over a wide temperature range. The linear reduction of output power wit
Publikováno v:
Semiconductor Science and Technology. 10:483-488
A room-temperature spatially resolved and polarization resolved photoluminescence (PL) technique is demonstrated to be a useful tool for studying the intermixing process in InGaAsP multiple-quantum-well systems disordered by focused ion beam implanta
Publikováno v:
Optical and Quantum Electronics. 23:1067-1076
The dynamics of optical filaments in broad aperture semiconductor lasers was studied. We use the model where one longitudinal mode is taken into account. The spectrum and the instabilities of lateral modes joined with the above mentioned longitudinal
Publikováno v:
Journal of Applied Physics. 84:4076-4078
We report on an experimental verification of a phenomenological model describing high-power and high-temperature operation of a compressively strained, InGaAsP multiple quantum well ridge-waveguide laser. The model, based on an assumption that mainly
Publikováno v:
Applied Physics Letters. 70:3419-3421
The effects of defect-enhanced, impurity-free, quantum-well (QW)-barrier compositional intermixing caused by the SiO2 cap annealing at 750 °C of a 1.5-μm InGaAsP/InP multiple quantum-well (MQW) laser structure have been studied by photoluminescence
Autor:
John G. Simmons, D.M. Bruce, J.D. Evans, Yu. Si, Jie Zhao, D.A. Thompson, B. B. Elenkrig, I. M. Templeton
Publikováno v:
Applied Physics Letters. 65:1239-1241
The effect of strain on F+ and Si+ implantation‐induced compositional disordering in InGaAsP strained layer multiple‐quantum‐well (MQW) heterostructures has been studied by investigating the temperature dependence of the photoluminescence (PL)
Publikováno v:
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).
The series resistance of InGaAsP/InP Multiple Quantum Well ridge waveguide laser diodes is investigated experimentally over a wide temperature range for both Fabry-Perot and Distributed Feedback type lasers. From the temperature dependence of the ser
Autor:
Pey-Kee Lau, Anatoli Polkovnikov, B. B. Elenkrig, Robert A. Suris, Levon V. Asryan, N. A. Gun’ko, S. Smetona, T. Makino, John G. Simmons, Georgy G. Zegrya
Publikováno v:
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).
An analytical model taking into account carrier and lattice heating effect on high power operation of multiple quantum well lasers is developed. The lattice heating is shown to dominate at high injection current, while the carrier heating prevails at