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pro vyhledávání: '"B. Agius"'
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Autor:
Israel Jacob Rabin Baumvol, V. Edon, B. Agius, Carlos Driemeier, L. Miotti, Karen Paz Bastos, Francine Tatsch, M. C. Hugon, C. Krug
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:366-369
La and Hf aluminates are promising candidates to replace SiO 2 as gate dielectric for future Si-based metal–oxide–semiconductor devices. In this study, ion beam analyses were employed to investigate the composition of La and Hf aluminate thin fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb13de29afc4672dbfac61617fef3bec
https://doi.org/10.1016/j.nimb.2006.04.030
https://doi.org/10.1016/j.nimb.2006.04.030
Autor:
B. Agius, O. Leroy, J. Bretagne, Michel Touzeau, Lionel Teulé-Gay, C. Boisse-Laporte, L. de Poucques, M.C. Hugon
Publikováno v:
Surface and Coatings Technology. 179:176-181
A new type of plasma reactor for thin film deposition has been designed: a magnetron-sputtering device assisted by microwave applicators to ionise the sputtered vapour of the magnetron. Ionizing the vapour has several advantages: improvement of the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c65a043d23bced2524108406bb9b12e7
https://doi.org/10.1016/s0257-8972(03)00856-9
https://doi.org/10.1016/s0257-8972(03)00856-9
Publikováno v:
Coral Reefs. 22:35-47
The branching scleractinian coral Agaricia tenuifolia is abundant on reefs in Belize, over an exceptionally broad range of depth, flow regime, and irradiance. Photosynthesis and respiration of coral branches were measured over a range of irradiance a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e599b40a7742ddaa7718c28cb3ad6508
https://doi.org/10.1007/s00338-003-0277-6
https://doi.org/10.1007/s00338-003-0277-6
Publikováno v:
Journal of Materials Research. 16:3005-3008
Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbc3e02ae63d9138a70d4e44c6179ac4
https://doi.org/10.1557/jmr.2001.0412
https://doi.org/10.1557/jmr.2001.0412
Publikováno v:
Journal of Materials Research. 16:2591-2599
The preparation of high-permittivity perovskite materials requires high-temperature (550–750 °C) oxidizing environments, providing stringent limitations on the choice of electrode materials. To minimize interdiffusion and oxidation reactions, an e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fc11ad0de58f79bc8d643de91158095
https://doi.org/10.1557/jmr.2001.0356
https://doi.org/10.1557/jmr.2001.0356
Publikováno v:
Integrated Ferroelectrics. 38:221-228
Due to its resistance to oxidation, TaSiN is a promising candidate as an electrically conductive barrier layer for integration of high permittivity oxides in advanced high-density memory devices. In this study we report on the properties and the resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4dd853bf66f6cf9e242410a0d622a52
https://doi.org/10.1080/10584580108016935
https://doi.org/10.1080/10584580108016935
Autor:
B. Agius, Ian Vickridge, Angus I. Kingon, Dong Joo Kim, M. C. Hugon, F. Letendu, J. M. Desvignes
Publikováno v:
Integrated Ferroelectrics. 31:315-322
Due to his resistance to oxidation, TaSiN is a promising candidate as an electric conductive barrier layer for integration of ferroelectrics and high permittivity oxides in advanced memory devices. Here we report on the properties and the resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297dc37f9dc3785b4b263d9ba846e685
https://doi.org/10.1080/10584580008215664
https://doi.org/10.1080/10584580008215664
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :578-583
The bottom electrode structure used with ferroelectric (FE) and high dielectric constant (HDC) materials requires a material to promote FE or HDC cristallisation (Pt or IrO2) and a material with diffusion barrier properties; this last material being
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3d93d4c253ddee57a68f09929f9e603
https://doi.org/10.1016/s0168-583x(99)00953-2
https://doi.org/10.1016/s0168-583x(99)00953-2
Publikováno v:
Le Journal de Physique IV. :Pr8-819
Previous works have described the deposition conditions of silicon oxide by Remote Microwave Plasma Enhanced Chemical Vapor Deposition. In this paper, the size of the quartz tube containing the glow discharge has been changed (O=255 mm instead of 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69d4cf9bce4b287676fce4547861418d
https://doi.org/10.1051/jp4:19998104
https://doi.org/10.1051/jp4:19998104