Zobrazeno 1 - 9
of 9
pro vyhledávání: '"B. A. Tairov"'
Publikováno v:
Low Temperature Physics. 43:1362-1367
A study of how the partial substitution of Bi with Pb impacts the mechanism of excess conductivity in a Bi-Sr-Ca-Cu-O system. It is found that such a substitution leads to an increase in the critical temperature of the Bi1.7Pb0.3Sr2Ca2Cu3Oy(B2) sampl
Publikováno v:
Low Temperature Physics. 42:930-935
We examine the effect of replacing calcium by zinc has on the transport properties of the BiSrCaCuO-2221 system. It is shown that the critical temperatures Tc of the Bi2Sr2CaCu2Ox(B1) and Bi2Sr2ZnCu2Oy(B2) samples are close (81 K and 80.72 K). Howeve
Publikováno v:
Semiconductors. 50:996-1000
The temperature dependences of the Fermi level, concentrations of charge carriers, and their effective mass ratio in the Bi1–xSbx system (x = 0.06, 0.12) are determined on the basis of quantitative analysis of the temperature dependence of the Hall
Autor:
Kh. A. Gasanova, B. A. Tairov
Publikováno v:
Low Temperature Physics. 41:300-302
Analysis of the experimentally found dependences of the Hall and magnetoresistance coefficients in the temperature range 77–300 K was presented for the Bi0.88Sb0.12 single-crystal alloy doped with 0.2 at. % of Te. On the basis of these data, the te
Publikováno v:
Low Temperature Physics. 37:273-276
A new superconducting ceramic material CdBa2Cu3O7−δ is obtained. It is found that the superconducting transition (at 86 K) is retained when yttrium is fully replaced by cadmium in the Y-Ba-Cu-O system. X-ray diffraction studies show that the cryst
Publikováno v:
Semiconductors. 45:148-152
The components of resistivity (ρij), Hall coefficient (Rijk), and magnetoresistance (ρij, kl) of n-Bi0.88Sb0.12 single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77–300 K. It is conclud
Publikováno v:
Semiconductors. 44:1149-1152
Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In0.5Ga0.5Sb are studied. The concentration and temperature dependences of the effective mass of holes
Publikováno v:
Semiconductors. 42:1146-1148
Temperature dependences of electrical conductivity σ, Hall coefficient R, and thermopower α0 in Ag2S are reported. It is established that at T ≈ 435 ± 5 K, all kinetic parameters vary drastically, which is associated with a change in parameters