Zobrazeno 1 - 10
of 17
pro vyhledávání: '"B. A. Shangereeva"'
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 46, Iss 4, Pp 102-112 (2020)
Objectives. The development of a mathematical model for the increased turbidity zones of the Aksay river in order to determine the siltation volumes of the Aksay water reservoir storage.Method. The mathematical model is developed using the theory of
Externí odkaz:
https://doaj.org/article/c1c4101375ab431e9af5331e3f42e554
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 0, Iss 2, Pp 23-27 (2017)
The article considers structural and technological parameters affecting breakdown voltage of a BSIT transistor cell. The main objective of the scientific research in that field is optimization of manufacturing techniques of power electronics transist
Externí odkaz:
https://doaj.org/article/486697f16c06491782f590dbafb5f458
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 42, Iss 3, Pp 83-91 (2016)
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods. The paper provides a comparative analysis of the advantages of bipolar static induct
Externí odkaz:
https://doaj.org/article/7d30f1170c274960bdac751357f37929
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 35, Iss 4, Pp 56-62 (2016)
The article discusses the results of plasma chemical etching of silicon dioxide in the fluorine-containing medium in the manufacture of semiconductor devices. Delivered and processed to obtain the solution of the smoothed microrelief contact windows
Externí odkaz:
https://doaj.org/article/d1cb44281ef340369a50d38c18951155
Autor:
B. A. Shangereeva
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 29, Iss 2, Pp 26-33 (2016)
Film silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, whichinclude: thermal oxidation, anodizing in electrolytes, pyrolytic
Externí odkaz:
https://doaj.org/article/44df0033961f4c48ae1aca3c21e58314
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 40, Iss 1, Pp 31-37 (2016)
It is proved that a prospective direction of electronic power development are intelligent power components: integrated power ICS and modules. Power electronic devices in the field of switched currents up to 50 A are arranged. The results of the semic
Externí odkaz:
https://doaj.org/article/aa95029ff5604694a9e59cfad73035e3
Autor:
B. A. Shangereeva
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 54-56 (2008)
The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological condition
Externí odkaz:
https://doaj.org/article/05f19bf89625469996c35b86200f3606
Publikováno v:
Russian Microelectronics. 49:385-388
The technology of mounting a crystal of a semiconductor device is described. The technology of soldering in mounting a crystal of a semiconductor device is presented. The question of using lead solders for soldering silicon crystals is considered. Me
Publikováno v:
Izvestiâ vysših učebnyh zavedenij. Priborostroenie. 63:61-69
Publikováno v:
Glass and Ceramics. 75:488-490
The effect of different methods of processing quartz accessories for the purpose of completely removing hardly soluble films of borosilicate and phosphosilicate glasses is investigated. It is shown that the methods developed for processing quartz acc