Zobrazeno 1 - 5
of 5
pro vyhledávání: '"B. A. Malyukov"'
Autor:
N. Egorov, V. D. Chumak, V. N. Statsenko, V. S. Chernysh, Andrey A. Shemukhin, A. S. Patrakeev, Yu. V. Balakshin, S. Golubkov, Alexander I. Sidorov, B. A. Malyukov
Publikováno v:
Technical Physics Letters. 38:907-909
The effect of energy, dosage, and temperature of irradiation of silicon-on-sapphire structures by Si+ ions, as well as parameters of recrystallization annealing, on crystallinity of silicon film is shown. Implantation conditions and recrystallization
Publikováno v:
Crystal Research and Technology. 18:53-59
Orientation relationships of aluminium nitride on sapphire (1126) AlN/(0112) Al2O3 have been defined more exactly by X-ray diffractometry techniques. It has been found that, depending on the substrate misorientation from the surface plane (0112), the
Autor:
B. A. Malyukov, V. E. Korolev
Publikováno v:
Measurement Techniques. 16:833-835
1. Kiessig's method is an absolute method of measuring film thicknesses of 10–50 nm. 2. Measurement of a film thickness greater than 50 nm by Kiessig's method is related with difficulties due to the disappearance of the first maxima on the interfer
Autor:
R. L. Barinskii, B. A. Malyukov
Publikováno v:
Journal of Structural Chemistry. 5:558-560
Autor:
R. L. Barinskii, B. A. Malyukov
Publikováno v:
Journal of Structural Chemistry. 3:327-328