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Autor:
L. A. Samoska, James L. Merz, George R. Chapman, S. M. Johnson, B. A. Baumgratz, J. L. Johnson, M. D. Jack, Arthur C. Gossard, K. Kosai
Publikováno v:
Journal of Applied Physics. 80:1116-1127
The InAs/Ga1−xInxSb strained‐layer superlattice (SLS) holds promise as an alternative III–V semiconductor system for long wavelength infrared detectors. In this article, we present the first investigation, to the best of our knowledge, of heter