Zobrazeno 1 - 10
of 108
pro vyhledávání: '"B. A. Aronzon"'
Autor:
A. V. Kochura, R. G. Dzhamamedov, A. B. Mekhiya, L. N. Oveshnikov, T. R. Arslanov, V. V. Rodionov, M. Alam, A. P. Kuzmenko, A. B. Davydov, B. A. Aronzon
Publikováno v:
AIP Advances, Vol 12, Iss 3, Pp 035330-035330-5 (2022)
In this work we studied transport properties of eutectic InSb-MnSb crystals with oriented MnSb needle-like inclusions under a hydrostatic pressure up to P = 8 GPa and after its application. We show that the pressure-induced variation of the samples r
Externí odkaz:
https://doaj.org/article/5e9ce3e15e0f4d1ea8b9a737a0558b1c
Autor:
E. A. Ganshina, I. M. Pripechenkov, N. N. Perova, E. S. Kanazakova, L. N. Oveshnikov, M. Jaloliddinzoda, A. I. Ril’, A. B. Granovsky, B. A. Aronzon
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 87:282-286
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86431249ecd274d7dfa8ba3d162598fe
https://doi.org/10.3103/s1062873822701088
https://doi.org/10.3103/s1062873822701088
Publikováno v:
Physical Review B. 107
We study the effects a strong Coulomb disorder on the transverse magnetoresistance in Weyl semimetals at low temperatures. Using the diagrammatic technique and the Keldysh model to sum up the leading terms in the diagrammatic expansion, we find that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d396f51088307773f361b4b42d8c960
https://doi.org/10.1103/physrevb.107.155120
https://doi.org/10.1103/physrevb.107.155120
Autor:
V S Zakhvalinskii, T B Nikulicheva, E A Pilyuk, E Lähderanta, M A Shakhov, O N Ivanov, E P Kochura, A V Kochura, B A Aronzon
Publikováno v:
Materials Research Express, Vol 7, Iss 1, p 015918 (2020)
Charge carriers parameters on a 2D-layer surface for (Cd _1−x−y Zn _x Mn _y ) _3 As _2 ( y = 0.08) (the concentration ${n}_{2D}$ = 1.9 × 10 ^12 cm ^–2 , the effective value of the 2D-layer ${d}_{2D}={n}_{2D}/{n}_{3D}$ = 14.5 nm, the wave vecto
Externí odkaz:
https://doaj.org/article/a5bff82191434a83b7d463315d81d09c
Publikováno v:
Technical Physics Letters. 47:490-493
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fdd5f662a007ae9181a9d666b104719
https://doi.org/10.1134/s1063785021050205
https://doi.org/10.1134/s1063785021050205
Publikováno v:
Physics of the Solid State. 62:419-422
Thin films of Dirac semimetal Cd3As2 about 100 nm thick made of single crystals of cadmium arsenide, prepared by direct fusion of the elements by vacuum–ampoule method, by vacuum–thermal sputtering/depostion have been studied. Temperature and mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610656ca5d2fee04434e384093163d84
https://doi.org/10.1134/s1063783420030063
https://doi.org/10.1134/s1063783420030063
Autor:
L. S. Parshina, B. A. Aronzon, A. V. Kochura, E. I. Nekhaeva, A. I. Dmitriev, A. P. Kuz’menko, O. A. Novodvorskii, E. P. Kochura, Olga D. Khramova, A. L. Vasil’ev
Publikováno v:
Physics of the Solid State. 62:241-245
Magnetic properties of two-phase granular semiconductor–ferromagnet GaSb–MnSb films obtained by pulsed laser deposition as a function of growth temperature and postgrowth annealing were stu-died.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::597fcd3604617eacb3e5174e5f71d5dc
https://doi.org/10.1134/s1063783420020110
https://doi.org/10.1134/s1063783420020110
Autor:
B. A. Aronzon, A. A. Kazakov, L. N. Oveshnikov, A. B. Davydov, S. F. Marenkin, A. B. Mekhiya, A. I. Ril
Publikováno v:
Semiconductors. 53:1439-1444
Thin films of solid solutions based on the three-dimensional Dirac semimetal Cd3As2 with the addition of manganese are investigated. Cd3 –xMnxAs2 films (x = 0, 0.05, and 0.1) 50–70 nm in thickness are formed on a glassceramic substrate using vacu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb88d100e492175e0f2ada1ac5081507
https://doi.org/10.1134/s1063782619110137
https://doi.org/10.1134/s1063782619110137
Autor:
A. V. Kochura, E. A. Pilyuk, A. P. Kuz’menko, S. F. Marenkin, B. A. Aronzon, A. I. Ril, V. S. Zakhvalinskii, Aung Zaw Htet
Publikováno v:
Inorganic Materials. 55:879-886
Thin (~50 nm) cadmium arsenide films have been grown by magnetron sputtering on single-crystal silicon and sapphire substrates. Using X-ray diffraction, scanning electron microscopy, atomic force microscopy, and Raman spectroscopy, the composition of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c6229965c72dd89a5d67a8223304372
https://doi.org/10.1134/s002016851909005x
https://doi.org/10.1134/s002016851909005x
Autor:
S. Yu. Gavrilkin, A. V. Kochura, A. P. Kuz’menko, V. S. Zakhvalinskii, V. A. Kulbachinskii, A. F. Knjazev, E. A. Pilyuk, B. A. Aronzon, L. N. Oveshnikov, A. B. Davydov
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 20:134-141
The vapor phase growth of Cd3As2—Zn3As2 (in the following (Cd1−x Znx)3As2 solid solutions process is described. The (Cd0,993 Zn0,007)3As2 solid solution single crystals were synthesized. Scanning electron microscopy and electron diffraction data
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41cdb7d4f75b7d54e8b9bc6f86341d92
https://doi.org/10.17073/1609-3577-2017-2-134-141
https://doi.org/10.17073/1609-3577-2017-2-134-141