Výsledky vyhledávání - "B., Nagabhushan"

Akademický článek

A Retrospective Study of Tenecteplase in Patients with ST Elevated Acute Myocardial Infarction.

Autor: R., Ravikumara¹, B., Nagabhushan², Gs, Chiranth³, D. B., Nareshachari⁴

Publikováno v: European Journal of Cardiovascular Medicine. 2024, Vol. 14 Issue 1, p58-61. 4p.

GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

Autor: B. Nagabhushan, Sk Masiul Islam, Sisir Chowdhury, Pallab Banerji, Snigdha Chakraborty, Rabibrata Mukherjee, K. Sarkar

Publikováno v: AIP Conference Proceedings.

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f79f7c8efa83d024b72b5e3cb595c73
https://doi.org/10.1063/1.4917676

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Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

Autor: B. Nagabhushan, K. Sarkar, Pranab Biswas, Souvik Kundu, Arunava Chaudhuri, Sisir Chowdhury, Pallab Banerji, Nripendra N. Halder

Publikováno v: Applied Physics Letters. 106:012103

Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4156275ed620b184c10eed1d5576705f
https://doi.org/10.1063/1.4905345

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Evanescent Field Atom Optics Using Micro-Tapered Fibers

Autor: B.J. Shortt, Jonathan M. Ward, Thejesh B. Nagabhushan, Sil Nic Chormiac, Kieran Deasy, Michael J. Morrissey

Publikováno v: Frontiers in Optics.

We present initial results obtained using an evanescent field of a tapered optical fibre for trapping and guiding cold, neutral atoms. Losses through the fibre are monitored in order to detect atom-light coupling. Article not available.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba75bc46a7d1355339c646a4f9f1a7bd
https://doi.org/10.1364/ls.2006.ltuk3

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Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

Autor: Pallab Banerji, Nripendra N. Halder, Souvik Kundu, Pranab Biswas, B. Nagabhushan, Dhrubes Biswas

Publikováno v: Journal of Applied Physics. 115:203719

Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing the charge transport phenomenon in these heterojunctions. In this

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7aa37df4b14515202972379b6e98a0b2
https://doi.org/10.1063/1.4880738

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Active control of a relaxed-static-stability airplane using a discrete model following technique

Autor: B. Nagabhushan, F. Lutze

Publikováno v: 21st Aerospace Sciences Meeting.

Er iva t ive w i t h respect to a Derivative w i t h respect to tim ra te of change of a Derivative w i t h respect to 6, : 6, A discretized, real model following scheme is used to construct an active controller which augments the s t ab i l i t y of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c1d2c1261bed504e80a5e34ad51fa558
https://doi.org/10.2514/6.1983-279

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