Zobrazeno 1 - 10
of 1 724
pro vyhledávání: '"B-Y. Tsaur"'
Publikováno v:
IEEE Electron Device Letters. 11:418-419
The commenters discuss the increase factor of maximum electron mobility when NMOS SOI devices cool down to liquid-nitrogen temperature (LNT) reported by the authors of the above-mentioned paper (ibid., vol.11, p.126-8, Mar. 1990). The commenters poin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf7c8ed8f6164229469f24aa67febdb
https://doi.org/10.1109/55.62975
https://doi.org/10.1109/55.62975
Publikováno v:
IEEE Electron Device Letters; 1990, Vol. 11 Issue 9, p418-419, 2p
Publikováno v:
IEEE Photonics Technology Letters. 3:761-763
Through-wafer optical communication has been demonstrated in experiments employing two vertically stacked Si wafers, the upper one with In/sub 0.15/Ga/sub 0.85/As-In/sub 0.15/Al/sub 0.85/As double-heterostructure LEDs (light-emitting diodes) grown by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d086bb44ea5c100ee3eb0130d32ec89c
https://doi.org/10.1109/68.84478
https://doi.org/10.1109/68.84478
Publikováno v:
Applied Physics Letters. 57:1111-1113
Schottky barrier PtSi‐Si diodes formed by ultrahigh vacuum deposition and annealing of 1‐nm‐thick Pt films on n‐ and p‐type (100) Si substrates were characterized by current‐voltage measurements at liquid‐nitrogen temperature. The diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d00f69a74b7251d631578087270a0a3e
https://doi.org/10.1063/1.103507
https://doi.org/10.1063/1.103507
These proceedings contain 54 papers grouped under the headings of: Implanted dopant activation and diffusion in silicon; Defects and microstructure; Equipment and device applications; Silicides and oxides; and Compound semiconductors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ac26dcf01f824e9be096e01ddc312c6
https://doi.org/10.1016/b978-0-08-034724-0.50096-2
https://doi.org/10.1016/b978-0-08-034724-0.50096-2
Publikováno v:
Journal of the Korean Physical Society; Nov2024, Vol. 85 Issue 10, p793-797, 5p
Publikováno v:
Journal of The Electrochemical Society. 132:1201-1206
Etude de l'effet d'un prerecuit a basse temperature suivi d'un recuit thermique rapide sur Si implante par des ions As + de 80 keV (doses de 1×10 15 et 1×10 16 cm −2 ). Discussion des proprietes electriques de Si et de la distribution des impuret
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09e0c820820652bec1625fbfeeb7bb37
https://doi.org/10.1149/1.2114059
https://doi.org/10.1149/1.2114059
Autor:
L. S. Hung, B. Y. Tsaur
Publikováno v:
Applied Physics Letters. 37:648-651
We demonstrate that fine‐grained polycrystalline Si films obtained by chemical vapor deposition can be aligned expitaxially with respect to the underlying (100) Si substrate upon furnace annealing at temperatures of 1000–1150 °C. The alignment p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f8d428de1f01b68c4590c8d18b12a2a
https://doi.org/10.1063/1.92031
https://doi.org/10.1063/1.92031
Autor:
D. J. Silversmith, B-Y. Tsaur, John C. C. Fan, Steven R. J. Brueck, D. V. Murphy, T. F. Deutsch
Publikováno v:
Applied Physics Letters. 40:895-898
Spatially resolved (∼1 μm) Raman scattering measurements of the Si optical phonon spectrum have been used to map the stress in silicon‐on‐sapphire device structures. Devices defined by an isolated island etch technique exhibit a stress relaxat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e41198f2aa2409a5de8769c38d50faab
https://doi.org/10.1063/1.92939
https://doi.org/10.1063/1.92939
Publikováno v:
Applied Physics Letters. 36:823-826
Metastable Ag‐Cu solid solutions have been formed by ion‐beam mixing of thin deposited Ag and Cu layers of various compositions. X‐ray diffraction measurements indicated that the lattice parameters of the ion‐induced Ag‐Cu alloys vary almos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c10ec7ca82b126e56ebc777fdf030e
https://doi.org/10.1063/1.91331
https://doi.org/10.1063/1.91331