Zobrazeno 1 - 10
of 44
pro vyhledávání: '"B V, Goncharov"'
Autor:
B. A. Gurovich, K. E. Prikhodko, L. V. Kutuzov, B. V. Goncharov, D. A. Komarov, E. M. Malieva
Publikováno v:
Physics of the Solid State. 63:1369-1372
Autor:
B. A. Gurovich, B. V. Goncharov, K. E. Prikhod’ko, L. V. Kutuzov, L. V. Stolyarov, E. M. Malieva
Publikováno v:
Physics of the Solid State. 63:1366-1368
Publikováno v:
Physics of the Solid State. 62:1585-1591
A possibility of contactless switching of an NbN nanowire from superconducting to normal state by passing a current through a gate located at a certain distance from the nanowire is demonstrated. The gate, being isolated from the nanowire by an Al2O3
Autor:
L. V. Kutuzov, B. V. Goncharov, E. D. Ol’shanskii, D. A. Komarov, K. E. Prikhod’ko, M. M. Dement’eva, V. L. Stolyarov, B. A. Gurovich, A. G. Domantovskii
Publikováno v:
Technical Physics. 65:1777-1779
The influence of integrated resistors formed under irradiation in a nanowire on its superconducting transitions has been investigated. Niobium nitride nanowires with widths of 75–20 000 nm fabricated from a 5-nm-thick NbN film on single-crystal sil
Autor:
Boris S. Shvetsov, A. A. Nesmelov, M. N. Martyshov, B. V. Goncharov, Pavel A. Forsh, Vyacheslav A. Demin, Dmitry A. Lapkin, A. N. Matsukatova, Andrey V. Emelyanov, V. V. Rylkov, A. A. Minnekhanov
Publikováno v:
Technical Physics Letters. 45:1103-1106
Flexible memristive structures based on poly-para-xylelene layers, which exhibit stable resistive switchings and are resistant to bendings with radii up to 10 mm, have been prepared and studied. A two-step scheme of setting the resistive state of the
Publikováno v:
Gamma-ray Bursts: 15 Years of GRB Afterglows ISBN: 9782759810024
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::255e1b8a94974997534e09ca89edf99f
https://doi.org/10.1051/978-2-7598-1002-4.c091
https://doi.org/10.1051/978-2-7598-1002-4.c091
Autor:
V. L. Stolyarov, B. A. Gurovich, M. M. Dementyeva, K. E. Prikhod’ko, E. M. Malieva, A. A. Cherepanov, E. D. Olshansky, A. G. Domantovsky, L. V. Kutuzov, B. V. Goncharov
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1005:012023
Thin NbN films were synthesized by a method of magnetron sputtering of solid Nb targets by nitrogen ions at temperatures less than 100 °C on substrates of the sapphire. The dependences of electrical resistance of films on the temperature in range 4.
Publikováno v:
Geoecology and Computers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bdf04f9cfb8864e56aeb5c102ebef1c
https://doi.org/10.1201/9780203753620-39
https://doi.org/10.1201/9780203753620-39
Autor:
B. V. Goncharov, K. E. Prihod’ko, D. A. Komarov, Z. V. Lavrukhina, M. A. Tarkhov, M. M. Dement’eva, L. V. Kutuzov, E. D. Ol’shanskii, Evgenia Kuleshova, A. G. Domantovskii, B. A. Gurovich, D. A. Goncharova, V. L. Stolyarov
Publikováno v:
Nanotechnologies in Russia. 10:530-536
It is shown experimentally that the use of ion irradiation allows one to convert superconducting thin-film niobium nitride into dielectric niobium oxide in a controllable manner. The conversion of NbN into Nb2O5 throughout the entire thickness of the
Autor:
E. D. Ol’shanskii, Evgenia Kuleshova, A. G. Domantovskii, B. V. Goncharov, K. E. Prikhod’ko, M. A. Tarkhov, D. A. Goncharova, D. A. Komarov, B. A. Gurovich, V. L. Stolyarov, L. V. Kutuzov
Publikováno v:
Nanotechnologies in Russia. 9:386-390
In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ∼(1–3