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pro vyhledávání: '"B Shustov Denis"'
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 15, Iss 1, Pp 60-64 (2015)
The subject of study. Investigation results for 3C-SiC layers, obtained on single-crystal 15R-SiC substrates by sublimation epitaxy in vacuum are presented. Materials and methods. 15R polytype Lely crystals were used as a substrate; the growth was ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5913cfd8a106dd28d617143b73b65e4
http://ntv.ifmo.ru/file/article/11438.pdf
http://ntv.ifmo.ru/file/article/11438.pdf
