Zobrazeno 1 - 10
of 21 627
pro vyhledávání: '"B Shen"'
Autor:
N J Ayres, G Bison, K Bodek, V Bondar, T Bouillaud, E Chanel, P-J Chiu, B Clement, C B Crawford, M Daum, C B Doorenbos, S Emmenegger, M Fertl, P Flaux, W C Griffith, P G Harris, N Hild, M Kasprzak, K Kirch, V Kletzl, P A Koss, J Krempel, B Lauss, T Lefort, P Mohanmurthy, O Naviliat-Cuncic, D Pais, F M Piegsa, G Pignol, M Rawlik, I Rienäcker, D Ries, S Roccia, D Rozpedzik, P Schmidt-Wellenburg, N Severijns, B Shen, K Svirina, R Tavakoli Dinani, J A Thorne, S Touati, A Weis, E Wursten, N Yazdandoost, J Zejma, N Ziehl, G Zsigmond
Publikováno v:
New Journal of Physics, Vol 25, Iss 10, p 103012 (2023)
We report on a search for a new, short-range, spin-dependent interaction using a modified version of the experimental apparatus used to measure the permanent neutron electric dipole moment at the Paul Scherrer Institute. This interaction, which could
Externí odkaz:
https://doaj.org/article/f2cd585b451147daa750f12ca0b57af5
Publikováno v:
Journal of Lipid Research, Vol 25, Iss 8, Pp 770-779 (1984)
We studied the effect in vitro of various concentrations of Triton WR-1339 on normolipidemic canine plasma and on the high density lipoproteins (HDL) isolated from this plasma by ultracentrifugation. As a preamble to this study, we established that T
Externí odkaz:
https://doaj.org/article/6174465cd3004cfa89ea44f45ce1fa5e
Publikováno v:
HemaSphere, Vol 6, Pp 1254-1255 (2022)
Externí odkaz:
https://doaj.org/article/80bb128ed6424593a44606852c80c8c3
Autor:
Y. Zhuang, A. Aierken, Q. Q. Lei, L. Fang, X. B. Shen, M. Heini, Q. Guo, J. Guo, X. Yang, J. H. Mo, R. K. Fan, J. Li, Q. Y. Chen, S. Y. Zhang
Publikováno v:
Frontiers in Physics, Vol 8 (2020)
The electrical and spectral properties of 150 KeV proton-irradiated MBE-grown In0.53Ga0.47As single junction solar cell and its post-thermal annealing properties were investigated. Both simulation and experimental methods were applied to analyze the
Externí odkaz:
https://doaj.org/article/365cd08763524ef3a286d82dfef91e6b
Publikováno v:
International Journal of Mining Science and Technology, Vol 28, Iss 2, Pp 281-286 (2018)
This paper attempts to quantify the effect of backfilling on pillar strength in highwall mining using numerical modelling. Calibration against the new empirical strength formula for highwall mining was conducted to obtain the material parameters used
Externí odkaz:
https://doaj.org/article/15afb68474af4053b13dee40b69355b6
Autor:
A. Shah, Y. Ozturk, H. Huang, I. Patel, J. Ma, B. Shen, J. Hu, L. Hao, M. Tian, J. Yang, H. Wei, T. A. Coombs
Publikováno v:
IEEE Transactions on Applied Superconductivity. 32:1-5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b22fc2e0c719fcb30e1c91043eb0ae9
https://doi.org/10.1109/tasc.2022.3149164
https://doi.org/10.1109/tasc.2022.3149164
Autor:
J. Hu, J. Ma, L. Hao, A. Shah, H. Wei, P. Patel, J. Yang, M. Tian, Q. Wang, H. Huang, B. Shen, T.A Coombs
Publikováno v:
IEEE Transactions on Applied Superconductivity. 32:1-5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17a60c8ee08b521843aaebcc4a29753c
https://doi.org/10.1109/tasc.2022.3163681
https://doi.org/10.1109/tasc.2022.3163681
Autor:
Luning Hao, B. Shen, Jun Ma, J. Yang, I. Patel, J. Hu, M. Tian, H. Wei, A. Shah, Q. Wang, T. A. Coombs
Publikováno v:
IEEE Transactions on Applied Superconductivity. 32:1-5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0ba16ecff75e57375921a73a93da23
https://doi.org/10.1109/tasc.2022.3140712
https://doi.org/10.1109/tasc.2022.3140712
Autor:
J. Hu, J. Ma, A. Shah, L. Hao, J. Yang, M. Tian, P. Ismail, H. Wei, Y. Ozturk, B. Shen, T.A. Coombs
Publikováno v:
IEEE Transactions on Applied Superconductivity. 32:1-5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab7fc69517cf0cd4b55e43f63b9d478b
https://doi.org/10.1109/tasc.2022.3143783
https://doi.org/10.1109/tasc.2022.3143783
Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell
Autor:
X. B. Shen, A. Aierken, M. Heini, J. H. Mo, Q. Q. Lei, X. F. Zhao, M. Sailai, Y. Xu, M. Tan, Y. Y. Wu, S. L. Lu, Y. D. Li, Q. Guo
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075205-075205-6 (2019)
In this paper we reported the electrical and spectral properties of 1 MeV electron and 3 MeV proton irradiated In0.53Ga0.47As single junction solar cell, which is used as the fourth subcell of wafer bonded GaInP/GaAs//InGaAsP/InGaAs four-junction ful
Externí odkaz:
https://doaj.org/article/d26bd9fa5531408fb348be93128f8cce