Zobrazeno 1 - 10
of 43
pro vyhledávání: '"B S Ryvkin"'
Publikováno v:
Electronics Letters, Vol 57, Iss 23, Pp 891-893 (2021)
Abstract The experimental characterization of a high‐power pulsed semiconductor laser operating in the eye‐safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer pos
Externí odkaz:
https://doaj.org/article/af7b9108e49547fe87abb76699ea52bb
Publikováno v:
Journal of Applied Physics. 91:3516-3521
We theoretically analyze the effect of current-directionality induced dichroism of fundamental absorption in III–V semiconductors with a high nonequilibrium carrier density. Band filling is shown to provide giant values of relative absorption diffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b88cb22481fbebb1cca73cb2591187ac
https://doi.org/10.1063/1.1450029
https://doi.org/10.1063/1.1450029
Publikováno v:
2014 16th International Conference on Transparent Optical Networks (ICTON).
We present theoretical investigation of single- and double-section high power semiconductor lasers with strongly asymmetric waveguides with a very large active layer thickness to optical confinement factor ratio, for generation of picosecond pulses.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c2beda2fe7a5388ad61879a832deb4
https://doi.org/10.1109/icton.2014.6876415
https://doi.org/10.1109/icton.2014.6876415
Publikováno v:
2014 16th International Conference on Transparent Optical Networks (ICTON).
We analyse theoretically the advantages of an asymmetric waveguide structure with a large equivalent spot size for use in a repetitively gain switched laser diode. The proposed construction, which maintains a single transverse mode, with a large equi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80683fffb879d3626380f761e2a90c33
https://doi.org/10.1109/icton.2014.6876636
https://doi.org/10.1109/icton.2014.6876636
Autor:
A. M. Georgievskii, B. S. Ryvkin
Publikováno v:
Semiconductors. 33:813-819
The problem of polarization switching of light from a vertical cavity surface emitting laser (VCSEL) is discussed. It is shown that heating of holes in the p-type distributed Bragg reflector and of electrons and holes in the quantum wells of the acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331b889012377f372d933a22957e9b03
https://doi.org/10.1134/1.1187788
https://doi.org/10.1134/1.1187788
Autor:
A. Ya. Shik, E. Yu. Kotel’nikov, V. E. Tokranov, N. A. Strugov, A. M. Georgievskii, B. S. Ryvkin, V. A. Solov’ev
Publikováno v:
Semiconductors. 31:378-383
A phenomenological theory describing nonstationary carrier transport processes in a system of undoped quantum wells with short carrier generation pulses is developed. An experimental method for finding the characteristic carrier trapping and carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05de34619441f7621cba9561ddb46b1a
https://doi.org/10.1134/1.1187167
https://doi.org/10.1134/1.1187167
Autor:
Eugene A. Avrutin, B. S. Ryvkin
Publikováno v:
2013 High Power Diode Lasers and Systems Conference (HPD).
A semi-analytical approach to analysing the electric properties of the optical confinement layer of large optical cavity lasers for arbitrary constant or graded doping is presented. Resistance nonlinearity and weak doping dependence of resistance at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab257948e4711c8ab573b4738bc0489e
https://doi.org/10.1109/hpd.2013.6706593
https://doi.org/10.1109/hpd.2013.6706593
Publikováno v:
Applied Physics Letters. 78:2655-2657
We theoretically analyze the effect of current-induced polarization dependence of absorption (fundamental and intersubband) and gain in degenerate semiconductors. The sign of the currentinduced polarization selectivity of absorption is shown to depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8028222a04a09aed3409036ba6957a
https://doi.org/10.1063/1.1367290
https://doi.org/10.1063/1.1367290
Publikováno v:
2010 12th International Conference on Transparent Optical Networks.
In this paper, we discuss the potential for using symmetric broadened and asymmetric non-broadened waveguide structures for short optical pulse generation by gain switching semiconductor lasers and for ultrashort pulse generation by mode locking. Imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a97a614615f89d144b7172ef69e10d53
https://doi.org/10.1109/icton.2010.5549074
https://doi.org/10.1109/icton.2010.5549074
Autor:
T.G. van de Roer, Irina Veretennicoff, E. Smalbrugge, W.C. van der Vleuten, Hugo Thienpont, Jan Danckaert, R.C. Strijbos, B. S. Ryvkin, Guy Verschaffelt, F Fouad Karouta, Martinus Petrus Creusen, G.A. Acket
Publikováno v:
IEEE Photonics Technology Letters, 12(8), 945-947. Institute of Electrical and Electronics Engineers
Vrije Universiteit Brussel
Vrije Universiteit Brussel
We present experimental evidence that asymmetric current injection in intracavity contacted vertical-cavity surface-emitting lasers (VCSELs) stabilizes the polarization of the emitted light. Anisotropies in the gain and loss mechanisms introduced by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a43f40c3f5eb2bb52865df674271d42
https://doi.org/10.1109/68.867969
https://doi.org/10.1109/68.867969