Zobrazeno 1 - 10
of 144
pro vyhledávání: '"B Rheinländer"'
Autor:
J Kováč, Jr., J Kováč, D Pudiš, A Šatka, F Uherek, V Gottschalch, B Rheinländer, H Herrnberger, J Zajadacz, K Zimmer, A Schindler
Publikováno v:
Laser Physics Letters. 4:200-203
We report on a new structure design and optical properties of the coupled edge and horizontal cavity vertical emitting laser (CE-HCSEL) with emission wavelength of ∼1160 nm based on InGaAs/GaAs double quantum well structure in the active layer. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::025a97b82d2c06c4e2457c896a334f6e
https://doi.org/10.1002/lapl.200610092
https://doi.org/10.1002/lapl.200610092
Autor:
T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovác, R. Schmidt-Grund, B. Rheinländer, D. Pudis
Publikováno v:
Laser Physics. 16:441-446
In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ∼1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiOx di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acdb5c6a4d09ba163a581ca03fa583ac
https://doi.org/10.1134/s1054660x06030042
https://doi.org/10.1134/s1054660x06030042
Publikováno v:
Journal of Crystal Growth. 126:151-155
Electrical and optical properties of InGaAs/InP multi-quantum well (MQW) PIN diodes with a 0.5 μm thick InP undoped spacer layer exhibiting low reverse bias leakage current and uniform avalanche multiplication gain of 10 near the breakdown voltage h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc024f40f1dba03641c0a2f4baf51ac1
https://doi.org/10.1016/0022-0248(93)90236-p
https://doi.org/10.1016/0022-0248(93)90236-p
Autor:
H. Hilmer, J. Sellmann, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, H. Hochmuth, J. Lenzner, M. Lorenz, M. Grundmann, Marília Caldas, Nelson Studart
Publikováno v:
AIP Conference Proceedings.
We report on high‐reflective all‐oxide Bragg reflectors for future applications in ZnO based resonators. Our YSZ‐Al2O3 Bragg reflectors were grown by pulsed laser deposition and show reflectivity values of up to 99.99% with a layer pair number
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::870ab6bcfbee452064919fa0f4781ed4
https://doi.org/10.1063/1.3295340
https://doi.org/10.1063/1.3295340
Autor:
R. Schmidt-Grund, C. Sturm, H. Hilmer, J. Sellmann, C. Czekalla, B. Rheinländer, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, Marília Caldas, Nelson Studart
Publikováno v:
AIP Conference Proceedings.
We report on the observation of exciton‐polaritons in all‐oxide resonator structures with a quasi‐bulk ZnO film as active medium at temperatures between 10 K and room temperature. The observed energy splitting of the exciton‐polariton branche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35bf64f481c302df89c02e4c8bf98348
https://doi.org/10.1063/1.3295353
https://doi.org/10.1063/1.3295353
Publikováno v:
Optics Communications. 80:259-261
A polarization bistability electrically triggered has been observed in 1.3 μm InGaAsP/InP single ridge waveguide lasers at room temperature. The polarization mode competition is encouraged by smearing out the lateral profile of the effective refract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5b5265fdac13d596ab786fc4429a811
https://doi.org/10.1016/0030-4018(91)90262-c
https://doi.org/10.1016/0030-4018(91)90262-c
Publikováno v:
Verhandlungen der Deutschen Gesellschaft fur Pathologie. 82
As many other nuclear markers, e.g. steroid receptors, Ki-67 epitopes are differentially expressed in tumour cell nuclei. It is unclear whether this phenomenon represents tumour cell heterogeneity, different stages of the cell-cycle or a biological p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8cb5e0c0804a8e47cce1db60644f0895
https://pubmed.ncbi.nlm.nih.gov/10095458
https://pubmed.ncbi.nlm.nih.gov/10095458
Autor:
J. Borgulová, A. Šatka, Volker Gottschalch, J. Škriniarová, Jan Jakabovic, M. Tomáška, J. Kováč, Frantisek Uherek, B. Rheinländer, S. Hasenohrl
Publikováno v:
Heterostructure Epitaxy and Devices — HEAD’97 ISBN: 9780792350132
Heterostructure Epitaxy and Devices — HEAD’97
Heterostructure Epitaxy and Devices — HEAD’97
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc3dcaca46e6af2036bd84e7317edce
https://doi.org/10.1007/978-94-011-5012-5_42
https://doi.org/10.1007/978-94-011-5012-5_42
Publikováno v:
Heterostructure Epitaxy and Devices — HEAD’97 ISBN: 9780792350132
Heterostructure Epitaxy and Devices — HEAD’97
Heterostructure Epitaxy and Devices — HEAD’97
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dddc214c774f5e0e46543776adabcb18
https://doi.org/10.1007/978-94-011-5012-5_38
https://doi.org/10.1007/978-94-011-5012-5_38
Autor:
J. Kováč, B. Rheinländer, Volker Gottschalch, Duncan W. E. Allsopp, A. Šatka, Frantisek Uherek
Publikováno v:
Heterostructure Epitaxy and Devices ISBN: 9789401065931
Heterostructure Epitaxy and Devices
Heterostructure Epitaxy and Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7755e37ac981d44c39cea6ce6751fc06
https://doi.org/10.1007/978-94-009-0245-9_54
https://doi.org/10.1007/978-94-009-0245-9_54