'Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model'

Autor: Gennaro Conte, Federica Cappelluti, Ernesto Limiti, B Pasciuto, Marco Pirola, E. Giovine, Giovanni Ghione, Vittorio Camarchia

Publikováno v: Diamond and related materials 26 (2012): 15–19. doi:10.1016/j.diamond.2012.03.010
info:cnr-pdr/source/autori:V. Camarchia, F. Cappelluti, G. Ghione, M. Pirola, G. Conte, B. Pasciuto, E. Limiti, E. Giovine/titolo:"Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model"/doi:10.1016%2Fj.diamond.2012.03.010/rivista:Diamond and related materials/anno:2012/pagina_da:15/pagina_a:19/intervallo_pagine:15–19/volume:26

The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-crystal H-terminated diamond MESFETs implemented within the Agilent ADS design suite. The DC characteristics of such devices suggest that the channel fr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40aaea90a9ac42dd3fe5290c21992769

MESFETs on H-terminated Single Crystal Diamond

Autor: Maria Cristina Rossi, Stefano Carta, Paolo Calvani, Ernesto Limiti, E. Giovine, B Pasciuto, Gennaro Conte, Andrey Bolshakov, Federica Cappelluti, G. V. Sharonov, Victor Ralchenko

Publikováno v: Diamond Electronics and Bioelectronics-Fundamentals to Applications III, 2010
info:cnr-pdr/source/autori:P. Calvani, M.C. Rossi, G. Conte, S. Carta, E. Giovine, B. Pasciuto, E. Limiti, F. Cappelluti, V. Ralchenko, A. Bolshakov, G. Sharonov/congresso_nome:Diamond Electronics and Bioelectronics-Fundamentals to Applications III/congresso_luogo:/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Scopus-Elsevier
1203 (2010).
info:cnr-pdr/source/autori:P. Calvani, M.C. Rossi, G. Conte, S. Carta, E. Giovine, B. Pasciuto, E. Limiti, F. Cappelluti, V. Ralchenko, A. Bolshakov, G. Sharonov/titolo:MESFETs on H-terminated Single Crystal Diamond/doi:/rivista:/anno:2010/pagina_da:/pagina_a:/intervallo_pagine:/volume:1203
2009 MRS Fall Meeting, pp. 185–189, 30/11-03/12/2009
info:cnr-pdr/source/autori:Calvani, P.; Rossi, M. C.; Conte, G.; Carta, S.; Giovine, E.; Pasciuto, B.; Limiti, E.; Cappelluti, F.; Ralchenko, V.; Bolshakov, A.; Sharonov, G./congresso_nome:2009 MRS Fall Meeting/congresso_luogo:/congresso_data:30%2F11-03%2F12%2F2009/anno:2010/pagina_da:185/pagina_a:189/intervallo_pagine:185–189

Epitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9aab1d7f2a1b7b74ab965ba9946733b0
https://publications.cnr.it/doc/81812

Empirical Nonlinear HFET Gate Charge Model

Autor: B. Pasciuto, Ernesto Limiti

An empirical Gate charge model for HFET suitable for implementation in CAD environments is proposed. The model consists of a single Gate charge nonlinear expression as function of two controlling voltages. Such model follows a recently published mode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f76b4c0a0386be00cc58eec3abf413b0
http://hdl.handle.net/2108/92948

RF Power Performance Evaluation of Surface Channel Diamond MESFET

Autor: Gennaro Conte, D. Dominijanni, E. Giovine, Ernesto Limiti, Paolo Calvani, B Pasciuto, Giovanni Ghione, Vittorio Camarchia, Maria Cristina Rossi, Federica Cappelluti

Publikováno v: 1203 (2010).
info:cnr-pdr/source/autori:M.C. Rossi, P. Calvani, G. Conte, V. Camarchia, F. Cappelluti, G. Ghione, B. Pasciuto, E. Limiti, D. Dominijanni, E. Giovine/titolo:RF Power Performance Evaluation of Surface Channel Diamond MESFET/doi:/rivista:/anno:2010/pagina_da:/pagina_a:/intervallo_pagine:/volume:1203

We experimentally investigate the large-signal radio frequency performances of surface-channel p-type diamond MESFETs fabricated on hydrogenated polycrystalline diamond. The devices under examination have a coplanar layout with two gate fingers, tot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::718521df29110b016c7801378847de82
http://www.cnr.it/prodotto/i/171659

Modeling of Metal-Semiconductor Field-Effect-Transistor on H- terminated polycrystalline diamond

Autor: Gennaro Conte, Ernesto Limiti, B Pasciuto, Walter Ciccognani, P. Calvani, Maria Cristina Rossi

Publikováno v: 2009 10th International Conference on Ultimate Integration of Silicon.

On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit model is formulated and characterized for Metal-Semiconductor Field Effect Transistors based on H-terminated polycrystalline diamond. Starting from on-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e6b67b4d24dac8788b3626b67a52d45
https://doi.org/10.1109/ulis.2009.4897586