Zobrazeno 1 - 10
of 31
pro vyhledávání: '"B P Papchenko"'
Autor:
N. M. Shmidt, A. S. Usikov, E. I. Shabunina, A. E. Chernyakov, S. Y. Kurin, Y. N. Makarov, H. I. Helava, B. P. Papchenko
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 15, Iss 1, Pp 46-53 (2015)
The results for external quantum efficiency degradation of two types of light emitting diodes based on III-nitrides: blue and ultraviolet ones are presented. Existing mechanisms proposed for the degradation are considered briefly. Applying several te
Externí odkaz:
https://doaj.org/article/7e522961a58f49c9924cfa73ae14bba8
Autor:
Oleg Khait, Alexander Roenkov, M V Puzyk, Oleg N. Medvedev, I A Ermakov, Alexander Usikov, Sergey Kurin, A A Antipov, I. S. Barash, Yu.N. Makarov, Heikki Helava, B P Papchenko, Alexey Y. Nikiforov
Publikováno v:
Materials Science Forum. 897:723-726
GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion proce
Autor:
N. M. Shmidt, Alexander Usikov, Eugene B. Yakimov, Jin Hyeon Yun, In Hwan Lee, Kirill D. Shcherbachev, N. B. Smirnov, S. A. Tarelkin, Yu.N. Makarov, Alexander Y. Polyakov, Heikki Helava, B P Papchenko, O. I. Rabinovich, Sergey Kurin, Sergey Didenko
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 1, Pp 32-39 (2017)
Electrical and luminescent properties of near-UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nomi
Autor:
B. P. Papchenko, A. V. Semenkin, A. A. Barabanov, K. M. Pichkhadze, S. V. Yanchur, V. K. Sysoev, S. G. Rebrov
Publikováno v:
Solar System Research. 50:471-476
The concept of interconnected satellite systems for various scientific and engineering applications based on small spacecraft and a transport and power module with a nuclear power plant is discussed. The system is connected by laser radiation from th
Autor:
B P Papchenko, Alexey Y. Nikiforov, Heikki Helava, Alexander Usikov, Yu.N. Makarov, Michael Puzyk
Publikováno v:
American Journal of Applied Sciences. 13:845-852
Direct water photoelectrolysis using III-N materials is a promising way for hydrogen production. GaN/AlGaN based p-n structures were used as working electrodes in a photoelectrochemical process to investigate the material etching (corrosion). The str
Autor:
S. A. Tarelkin, Yu.N. Makarov, Jin Hyeon Yun, O. I. Rabinovich, N. B. Smirnov, Eugene B. Yakimov, Alexander Y. Polyakov, N. M. Shmidt, B P Papchenko, Alexander Usikov, In Hwan Lee, Kirill D. Shcherbachev, Heikki Helava, Sergey Didenko, Sergey Kurin
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 19:75-86
Electrical and luminescent properties of near−UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under no
Autor:
M V Puzyk, Alexey Y. Nikiforov, Heikki Helava, B. P. Papchenko, Alexander Usikov, Yu. V. Kovaleva, Yu.N. Makarov
Publikováno v:
Technical Physics Letters. 42:482-485
Specific features of etching of GaN/AlGaN p–n structures in a KOH-based electrolyte have been studied. It was found that the corrosion process first passes across p layers through vertical channels associated with threading structural defects. Then
Autor:
M V Puzyk, Heikki Helava, Yu. Makarov, Alexander Usikov, B P Papchenko, Michael A. Reshchikov
Publikováno v:
Journal of Electronic Materials. 45:2178-2183
Gallium nitride, grown by hydride vapor phase epitaxy and capped with a thin AlGaN layer, was studied by photoluminescence (PL) methods. The concentration of free electrons in GaN was found from the time-resolved PL data, and the concentrations of po
Autor:
Sergey Didenko, Alexander Y. Polyakov, B P Papchenko, Heikki Helava, Alexander Usikov, Sergey Kurin, Eugene B. Yakimov, In Hwan Lee, Kirill D. Shcherbachev, Nikolai B. Smirnov, Jin Hyeon Yun, Haeng Keun Ahn, S. A. Tarelkin, Yu.N. Makarov
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 9:575-579
Double heterostructures AlGaN/GaN/AlGaN grown by hydride vapor phase epitaxy and designed for use as light emitting diodes for 360 nm wavelength were patterned by shallow nanoholes and injected with Ag/SiO2 or Al nanoparticles. A 1.8 times increase i
Autor:
M. I. Voronova, Alexander Usikov, Yu.N. Makarov, A A Antipov, B P Papchenko, K. B. Eidel’man, Heikki Helava, S Yu Kurin, V. D. Doronin
Publikováno v:
Russian Microelectronics. 43:559-564
The results of modeling photoelectric converters in a system with spectral splitting of solar energy are detailed. The solar radiation in this system is divided into three spectral regions (Δλ1 725 nm) with the use of dichroic filters and is then c